DIM1000ECM33-TS Datasheet. Specs and Replacement

Type Designator: DIM1000ECM33-TS  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 10400 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 3300 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 1000 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃

tr ⓘ - Rise Time, typ: 400 nS

Package: MODULE

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DIM1000ECM33-TS datasheet

 0.1. Size:532K  dynex
 dim1000ecm33-tl.pdf pdf_icon

DIM1000ECM33-TS

DIM1000ECM33-TL000 IGBT Chopper Module Replaces DS6105-1 DS6105-2 March 2014 (LN31424) FEATURES KEY PARAMETERS Low VCE(sat) Device VCES 3300V VCE(sat) * (typ) 2.0V 10 s Short Circuit Withstand IC (max) 1000A High Thermal Cycling Capability IC(PK) (max) 2000A High Current Density Enhanced DMOS SPT * Measured at the auxiliary terminals Isolated AlS... See More ⇒

 0.2. Size:532K  dynex
 dim1000ecm33-ts.pdf pdf_icon

DIM1000ECM33-TS

DIM1000ECM33-TS000 IGBT Chopper Module Replaces DS6091-1 DS6091-2 March 2014 (LN31425) FEATURES KEY PARAMETERS 10 s Short Circuit Withstand VCES 3300V VCE(sat) * (typ) 2.2V High Thermal Cycling Capability IC (max) 1000A High Current Density Enhanced DMOS SPT IC(PK) (max) 2000A Isolated AlSiC Base with AlN Substrates * Measured at the auxiliary terminal... See More ⇒

 7.1. Size:492K  dynex
 dim1000nsm33-ts.pdf pdf_icon

DIM1000ECM33-TS

DIM1000NSM33-TS000 Single Switch IGBT Module Replaces DS6093-1 DS6093-2 October 2013 (LN31017) FEATURES KEY PARAMETERS 10 s Short Circuit Withstand VCES 3300V VCE(sat) * (typ) 2.2V High Thermal Cycling Capability IC (max) 1000A High Current Density Enhanced DMOS SPT IC(PK) (max) 2000A Isolated AlSiC Base with AlN Substrates * Measured at the auxiliary ... See More ⇒

 7.2. Size:492K  dynex
 dim1000nsm33-tl.pdf pdf_icon

DIM1000ECM33-TS

DIM1000NSM33-TL000 Single Switch IGBT Module DS6109-1 June 2013 (LN30637) FEATURES KEY PARAMETERS Low VCE(sat) Device VCES 3300V VCE(sat) * (typ) 2.0V 10 s Short Circuit Withstand IC (max) 1000A High Thermal Cycling Capability IC(PK) (max) 2000A High Current Density Enhanced DMOS SPT * Measured at the auxiliary terminals Isolated AlSiC Base with... See More ⇒

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Specs: DF650R17IE4, DF650R17IE4D_B2, DF75R12W1H4F_B11, DF80R12W2H3_B11, DF80R12W2H3F_B11, DF900R12IP4D, DF900R12IP4DV, DIM1000ECM33-TL, YGW60N65F1A1, DIM1000NSM33-TL, DIM1000NSM33-TS, DIM1000XSM33-TL001, DIM1000XSM33-TS001, DIM100PHM33-F, DIM1200ASM45-TS, DIM1200ASM45-TS001, DIM1200ESM33-F

Keywords - DIM1000ECM33-TS transistor spec

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