All IGBT. DIM1000ECM33-TS Datasheet

 

DIM1000ECM33-TS IGBT. Datasheet pdf. Equivalent

Type Designator: DIM1000ECM33-TS

Type of IGBT Channel: N

Maximum Power Dissipation (Pc), W: 10400

Maximum Collector-Emitter Voltage |Vce|, V: 3300

Collector-Emitter saturation Voltage |Vcesat|, V: 2.2

Maximum Gate-Emitter Voltage |Veg|, V: 20

Maximum Collector Current |Ic|, A: 1000

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 400

Package: MODULE

DIM1000ECM33-TS Transistor Equivalent Substitute - IGBT Cross-Reference Search

DIM1000ECM33-TS IGBT. Datasheet pdf. Equivalent

Type Designator: DIM1000ECM33-TS

Type of IGBT Channel: N

Maximum Power Dissipation (Pc), W: 10400

Maximum Collector-Emitter Voltage |Vce|, V: 3300

Collector-Emitter saturation Voltage |Vcesat|, V: 2.2

Maximum Gate-Emitter Voltage |Veg|, V: 20

Maximum Collector Current |Ic|, A: 1000

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 400

Package: MODULE

DIM1000ECM33-TS Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

DIM1000ECM33-TS Datasheet (PDF)

0.1. dim1000ecm33-tl.pdf Size:532K _dynex

DIM1000ECM33-TS DIM1000ECM33-TS

DIM1000ECM33-TL000 IGBT Chopper Module Replaces DS6105-1 DS6105-2 March 2014 (LN31424) FEATURES KEY PARAMETERS  Low VCE(sat) Device VCES 3300V VCE(sat) * (typ) 2.0V  10µs Short Circuit Withstand IC (max) 1000A  High Thermal Cycling Capability IC(PK) (max) 2000A  High Current Density Enhanced DMOS SPT * Measured at the auxiliary terminals  Isolated AlS

0.2. dim1000ecm33-ts.pdf Size:532K _dynex

DIM1000ECM33-TS DIM1000ECM33-TS

DIM1000ECM33-TS000 IGBT Chopper Module Replaces DS6091-1 DS6091-2 March 2014 (LN31425) FEATURES KEY PARAMETERS  10µs Short Circuit Withstand VCES 3300V VCE(sat) * (typ) 2.2V  High Thermal Cycling Capability IC (max) 1000A  High Current Density Enhanced DMOS SPT IC(PK) (max) 2000A  Isolated AlSiC Base with AlN Substrates * Measured at the auxiliary terminal

 7.1. dim1000xsm33-tl001.pdf Size:484K _dynex

DIM1000ECM33-TS DIM1000ECM33-TS

DIM1000XSM33-TL001 Single Switch IGBT Module DS6104-1 June 2013 (LN30632) FEATURES KEY PARAMETERS  10.2kV Isolation VCES 3300V VCE(sat) * (typ) 2.0V  Low VCE(sat) Device IC (max) 1000A  10µs Short Circuit Withstand IC(PK) (max) 2000A  High Thermal Cycling Capability * Measured at the auxiliary terminals  High Current Density Enhanced DMOS SPT  I

7.2. dim1000xsm33-ts001.pdf Size:485K _dynex

DIM1000ECM33-TS DIM1000ECM33-TS

DIM1000XSM33-TS001 Single Switch IGBT Module DS6126-1 October 2013 (LN31016) FEATURES KEY PARAMETERS  10.2kV Isolation VCES 3300V VCE(sat) * (typ) 2.2V  10µs Short Circuit Withstand IC (max) 1000A  High Thermal Cycling Capability IC(PK) (max) 2000A  High Current Density Enhanced DMOS SPT * Measured at the auxiliary terminals  Isolated AlSiC Base With

 7.3. dim1000nsm33-ts.pdf Size:492K _dynex

DIM1000ECM33-TS DIM1000ECM33-TS

DIM1000NSM33-TS000 Single Switch IGBT Module Replaces DS6093-1 DS6093-2 October 2013 (LN31017) FEATURES KEY PARAMETERS  10µs Short Circuit Withstand VCES 3300V VCE(sat) * (typ) 2.2V  High Thermal Cycling Capability IC (max) 1000A  High Current Density Enhanced DMOS SPT IC(PK) (max) 2000A  Isolated AlSiC Base with AlN Substrates * Measured at the auxiliary

7.4. dim1000nsm33-tl.pdf Size:492K _dynex

DIM1000ECM33-TS DIM1000ECM33-TS

DIM1000NSM33-TL000 Single Switch IGBT Module DS6109-1 June 2013 (LN30637) FEATURES KEY PARAMETERS  Low VCE(sat) Device VCES 3300V VCE(sat) * (typ) 2.0V  10µs Short Circuit Withstand IC (max) 1000A  High Thermal Cycling Capability IC(PK) (max) 2000A  High Current Density Enhanced DMOS SPT * Measured at the auxiliary terminals  Isolated AlSiC Base with

Datasheet: DF650R17IE4 , DF650R17IE4D_B2 , DF75R12W1H4F_B11 , DF80R12W2H3_B11 , DF80R12W2H3F_B11 , DF900R12IP4D , DF900R12IP4DV , DIM1000ECM33-TL , IRGP4068D , DIM1000NSM33-TL , DIM1000NSM33-TS , DIM1000XSM33-TL001 , DIM1000XSM33-TS001 , DIM100PHM33-F , DIM1200ASM45-TS , DIM1200ASM45-TS001 , DIM1200ESM33-F .

 

 
Back to Top