DIM1600FSM17-A - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DIM1600FSM17-A
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 13890 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1700 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 1600 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.7 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 200 nS
Paquete / Cubierta: MODULE
Búsqueda de reemplazo de DIM1600FSM17-A IGBT
DIM1600FSM17-A Datasheet (PDF)
dim1600fsm17-a.pdf

DIM1600FSM17-A000 Single Switch IGBT Module Replaces DS5455-3.2 DS5455-4 October 2010 (LN27663) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VCES 1700V VCE(sat) * (typ) 2.7V High Thermal Cycling Capability IC (max) 1600A Non Punch Through Silicon IC(PK) (max) 3200A Isolated AlSiC Base with AlN Substrates * Measured at the power busbars, not the
dim1600fsm12-a.pdf

DIM1600FSM12-A000 Single Switch IGBT Module Replaces DS5533-3.1 DS5533-4 October 2010 (LN27611) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VCES 1200V VCE(sat) * (typ) 2.2V High Thermal Cycling Capability IC (max) 1600A Non Punch Through Silicon IC(PK) (max) 3200A Isolated AlSiC Base with AlN Substrates * Measured at the power busbars, not the
dim1600fss12-a.pdf

DIM1600FSS12-A000 Single Switch IGBT Module Replaces DS5541-2.4 DS5541-3 October 2010 (LN27660) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VCES 1200V VCE(sat) * (typ) 2.2V Non Punch Through Silicon IC (max) 1600A Isolated Cu Base with Al2O3 Substrates IC(PK) (max) 3200A Lead Free construction * Measured at the power busbars, not the auxiliary
dim1600ecm17-a.pdf

Preliminary Information DIM1600ECM17-A000 IGBT Chopper Module DS6069-1 September 2011 (LN28672) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VCES 1700V VCE(sat) * (typ) 2.7V High Thermal Cycling Capability IC (max) 1600A Soft Punch Through Silicon IC(PK) (max) 3200A Isolated AlSiC Base with AlN Substrates * Measured at the auxiliary terminal
Otros transistores... DIM1200FSM17-A , DIM1200FSS12-A , DIM1500ASM33-TL001 , DIM1500ASM33-TS001 , DIM1500ESM33-TL , DIM1500ESM33-TS , DIM1600ECM17-A , DIM1600FSM12-A , IKW50N60T , DIM1600FSS12-A , DIM1800ESM12-A , DIM1800ESS12-A , DIM200PHM33-F , DIM200PKM33-F , DIM200PLM33-F , DIM2400ESM12-A , DIM2400ESM17-A .
History: VS-GB50LP120N
History: VS-GB50LP120N



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