DIM200PLM33-F - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DIM200PLM33-F
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 2600 W
|Vce|ⓘ - Tensión máxima colector-emisor: 3300 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 200 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.8 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 225 nS
Paquete / Cubierta: MODULE
Búsqueda de reemplazo de DIM200PLM33-F - IGBT
DIM200PLM33-F Datasheet (PDF)
dim200plm33-f.pdf
DIM200PLM33-F000 IGBT Chopper Module Replaces DS5864-2 DS5864-3 October 2011 (LN28812) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VCES 3300V VCE(sat) * (typ) 2.8V High Thermal Cycling Capability IC (max) 200A Soft Punch Through Silicon IC(PK) (max) 400A Isolated AlSiC Base with AlN Substrates * Measured at the auxiliary terminals Lead F
dim200phm33-f.pdf
DIM200PHM33-F000 Half Bridge IGBT Module Replaces DS5606-4 DS5606-5 October 2011 (LN28814) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VCES 3300V VCE(sat) * (typ) 2.8V High Thermal Cycling Capability IC (max) 200A Soft Punch Through Silicon IC(PK) (max) 400A Isolated AlSiC Base with AlN Substrates * Measured at the auxiliary terminals Le
dim200pkm33-f.pdf
DIM200PKM33-F000 IGBT Chopper Module Replaces DS5865-2 DS5865-3 October 2011 (LN28813) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VCES 3300V VCE(sat) * (typ) 2.8V High Thermal Cycling Capability IC (max) 200A Soft Punch Through Silicon IC(PK) (max) 400A Isolated AlSiC Base with AlN Substrates * Measured at the auxiliary terminals Lead F
Otros transistores... DIM1600ECM17-A , DIM1600FSM12-A , DIM1600FSM17-A , DIM1600FSS12-A , DIM1800ESM12-A , DIM1800ESS12-A , DIM200PHM33-F , DIM200PKM33-F , IKW50N60H3 , DIM2400ESM12-A , DIM2400ESM17-A , DIM2400ESS12-A , DIM250PHM33-TL , DIM250PHM33-TS , DIM250PKM33-TL , DIM250PKM33-TS , DIM250PLM33-TL .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2