All IGBT. DIM200PLM33-F Datasheet

 

DIM200PLM33-F IGBT. Datasheet pdf. Equivalent

Type Designator: DIM200PLM33-F

Type of IGBT Channel: N

Maximum Power Dissipation (Pc), W: 2600

Maximum Collector-Emitter Voltage |Vce|, V: 3300

Collector-Emitter saturation Voltage |Vcesat|, V: 2.8

Maximum Gate-Emitter Voltage |Veg|, V: 20

Maximum Collector Current |Ic|, A: 200

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 225

Package: MODULE

DIM200PLM33-F Transistor Equivalent Substitute - IGBT Cross-Reference Search

DIM200PLM33-F IGBT. Datasheet pdf. Equivalent

Type Designator: DIM200PLM33-F

Type of IGBT Channel: N

Maximum Power Dissipation (Pc), W: 2600

Maximum Collector-Emitter Voltage |Vce|, V: 3300

Collector-Emitter saturation Voltage |Vcesat|, V: 2.8

Maximum Gate-Emitter Voltage |Veg|, V: 20

Maximum Collector Current |Ic|, A: 200

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 225

Package: MODULE

DIM200PLM33-F Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

DIM200PLM33-F Datasheet (PDF)

0.1. dim200plm33-f.pdf Size:430K _dynex

DIM200PLM33-F
DIM200PLM33-F

DIM200PLM33-F000 IGBT Chopper Module Replaces DS5864-2 DS5864-3 October 2011 (LN28812) FEATURES KEY PARAMETERS  10µs Short Circuit Withstand VCES 3300V VCE(sat) * (typ) 2.8V  High Thermal Cycling Capability IC (max) 200A  Soft Punch Through Silicon IC(PK) (max) 400A  Isolated AlSiC Base with AlN Substrates * Measured at the auxiliary terminals  Lead F

7.1. dim200phm33-f.pdf Size:425K _dynex

DIM200PLM33-F
DIM200PLM33-F

DIM200PHM33-F000 Half Bridge IGBT Module Replaces DS5606-4 DS5606-5 October 2011 (LN28814) FEATURES KEY PARAMETERS  10µs Short Circuit Withstand VCES 3300V VCE(sat) * (typ) 2.8V  High Thermal Cycling Capability IC (max) 200A  Soft Punch Through Silicon IC(PK) (max) 400A  Isolated AlSiC Base with AlN Substrates * Measured at the auxiliary terminals  Le

7.2. dim200pkm33-f.pdf Size:430K _dynex

DIM200PLM33-F
DIM200PLM33-F

DIM200PKM33-F000 IGBT Chopper Module Replaces DS5865-2 DS5865-3 October 2011 (LN28813) FEATURES KEY PARAMETERS  10µs Short Circuit Withstand VCES 3300V VCE(sat) * (typ) 2.8V  High Thermal Cycling Capability IC (max) 200A  Soft Punch Through Silicon IC(PK) (max) 400A  Isolated AlSiC Base with AlN Substrates * Measured at the auxiliary terminals  Lead F

Datasheet: DIM1600ECM17-A , DIM1600FSM12-A , DIM1600FSM17-A , DIM1600FSS12-A , DIM1800ESM12-A , DIM1800ESS12-A , DIM200PHM33-F , DIM200PKM33-F , G30N60C3D , DIM2400ESM12-A , DIM2400ESM17-A , DIM2400ESS12-A , DIM250PHM33-TL , DIM250PHM33-TS , DIM250PKM33-TL , DIM250PKM33-TS , DIM250PLM33-TL .

 

 
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