DIM200PLM33-F PDF Specs and Replacement
Type Designator: DIM200PLM33-F
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 2600 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 3300 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 200 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.8 V @25℃
tr ⓘ - Rise Time, typ: 225 nS
Package: MODULE
DIM200PLM33-F Substitution
DIM200PLM33-F PDF specs
dim200plm33-f.pdf
DIM200PLM33-F000 IGBT Chopper Module Replaces DS5864-2 DS5864-3 October 2011 (LN28812) FEATURES KEY PARAMETERS 10 s Short Circuit Withstand VCES 3300V VCE(sat) * (typ) 2.8V High Thermal Cycling Capability IC (max) 200A Soft Punch Through Silicon IC(PK) (max) 400A Isolated AlSiC Base with AlN Substrates * Measured at the auxiliary terminals Lead F... See More ⇒
dim200phm33-f.pdf
DIM200PHM33-F000 Half Bridge IGBT Module Replaces DS5606-4 DS5606-5 October 2011 (LN28814) FEATURES KEY PARAMETERS 10 s Short Circuit Withstand VCES 3300V VCE(sat) * (typ) 2.8V High Thermal Cycling Capability IC (max) 200A Soft Punch Through Silicon IC(PK) (max) 400A Isolated AlSiC Base with AlN Substrates * Measured at the auxiliary terminals Le... See More ⇒
dim200pkm33-f.pdf
DIM200PKM33-F000 IGBT Chopper Module Replaces DS5865-2 DS5865-3 October 2011 (LN28813) FEATURES KEY PARAMETERS 10 s Short Circuit Withstand VCES 3300V VCE(sat) * (typ) 2.8V High Thermal Cycling Capability IC (max) 200A Soft Punch Through Silicon IC(PK) (max) 400A Isolated AlSiC Base with AlN Substrates * Measured at the auxiliary terminals Lead F... See More ⇒
Specs: DIM1600ECM17-A , DIM1600FSM12-A , DIM1600FSM17-A , DIM1600FSS12-A , DIM1800ESM12-A , DIM1800ESS12-A , DIM200PHM33-F , DIM200PKM33-F , IKW50N60H3 , DIM2400ESM12-A , DIM2400ESM17-A , DIM2400ESS12-A , DIM250PHM33-TL , DIM250PHM33-TS , DIM250PKM33-TL , DIM250PKM33-TS , DIM250PLM33-TL .
Keywords - DIM200PLM33-F transistor spec
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