DIM250PHM33-TL Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: DIM250PHM33-TL  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 2600 W

|Vce|ⓘ - Tensión máxima colector-emisor: 3300 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 250 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2 V @25℃

trⓘ - Tiempo de subida, typ: 430 nS

Encapsulados: MODULE

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DIM250PHM33-TL datasheet

 ..1. Size:465K  dynex
 dim250phm33-tl.pdf pdf_icon

DIM250PHM33-TL

DIM250PHM33-TL000 Half Bridge IGBT Module DS6116-1 July 2013 (LN30665) FEATURES KEY PARAMETERS Low VCE(sat) Device VCES 3300V VCE(sat) * (typ) 2.0V 10 s Short Circuit Withstand IC (max) 250A High Thermal Cycling Capability IC(PK) (max) 500A High Current Density Enhanced DMOS SPT * Measured at the auxiliary terminals Isolated AlSiC Base with AlN

 1.1. Size:465K  dynex
 dim250phm33-ts.pdf pdf_icon

DIM250PHM33-TL

DIM250PHM33-TS000 Half Bridge IGBT Module DS6092-1 April 2013 (LN30402) FEATURES KEY PARAMETERS 10 s Short Circuit Withstand VCES 3300V VCE(sat) * (typ) 2.2V High Thermal Cycling Capability IC (max) 250A High Current Density Enhanced DMOS SPT IC(PK) (max) 500A Isolated AlSiC Base with AlN Substrates * Measured at the auxiliary terminals APPLICATIONS

 7.1. Size:487K  dynex
 dim250pkm33-ts.pdf pdf_icon

DIM250PHM33-TL

DIM250PKM33-TS000 IGBT Chopper Module Replaces DS6106-1 DS6106-2 July 2013 (LN30763) FEATURES KEY PARAMETERS 10 s Short Circuit Withstand VCES 3300V VCE(sat) * (typ) 2.2V High Thermal Cycling Capability IC (max) 250A High Current Density Enhanced DMOS SPT IC(PK) (max) 500A Isolated AlSiC Base with AlN Substrates * Measured at the auxiliary terminals

 7.2. Size:486K  dynex
 dim250plm33-tl.pdf pdf_icon

DIM250PHM33-TL

DIM250PLM33-TL000 IGBT Chopper Module DS6115-1 July 2013 (LN30664) FEATURES KEY PARAMETERS Low VCE(sat) Device VCES 3300V VCE(sat) * (typ) 2.0V 10 s Short Circuit Withstand IC (max) 250A High Thermal Cycling Capability IC(PK) (max) 500A High Current Density Enhanced DMOS SPT * Measured at the auxiliary terminals Isolated AlSiC Base with AlN Subs

MOSTRAR MÁS

Otros transistores... DIM1800ESM12-A, DIM1800ESS12-A, DIM200PHM33-F, DIM200PKM33-F, DIM200PLM33-F, DIM2400ESM12-A, DIM2400ESM17-A, DIM2400ESS12-A, IRG4PC50W, DIM250PHM33-TS, DIM250PKM33-TL, DIM250PKM33-TS, DIM250PLM33-TL, DIM250PLM33-TS, DIM400DCM17-A, DIM400DDM12-A, DIM400DDM17-A