All IGBT. DIM250PHM33-TL Datasheet

 

DIM250PHM33-TL Datasheet and Replacement


   Type Designator: DIM250PHM33-TL
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 2600 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 3300 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 250 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 430 nS
   Package: MODULE
 

 DIM250PHM33-TL substitution

   - IGBT ⓘ Cross-Reference Search

 

DIM250PHM33-TL Datasheet (PDF)

 ..1. Size:465K  dynex
dim250phm33-tl.pdf pdf_icon

DIM250PHM33-TL

DIM250PHM33-TL000 Half Bridge IGBT Module DS6116-1 July 2013 (LN30665) FEATURES KEY PARAMETERS Low VCE(sat) Device VCES 3300V VCE(sat) * (typ) 2.0V 10s Short Circuit Withstand IC (max) 250A High Thermal Cycling Capability IC(PK) (max) 500A High Current Density Enhanced DMOS SPT * Measured at the auxiliary terminals Isolated AlSiC Base with AlN

 1.1. Size:465K  dynex
dim250phm33-ts.pdf pdf_icon

DIM250PHM33-TL

DIM250PHM33-TS000 Half Bridge IGBT Module DS6092-1 April 2013 (LN30402) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VCES 3300V VCE(sat) * (typ) 2.2V High Thermal Cycling Capability IC (max) 250A High Current Density Enhanced DMOS SPT IC(PK) (max) 500A Isolated AlSiC Base with AlN Substrates * Measured at the auxiliary terminals APPLICATIONS

 7.1. Size:487K  dynex
dim250pkm33-ts.pdf pdf_icon

DIM250PHM33-TL

DIM250PKM33-TS000 IGBT Chopper Module Replaces DS6106-1 DS6106-2 July 2013 (LN30763) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VCES 3300V VCE(sat) * (typ) 2.2V High Thermal Cycling Capability IC (max) 250A High Current Density Enhanced DMOS SPT IC(PK) (max) 500A Isolated AlSiC Base with AlN Substrates * Measured at the auxiliary terminals

 7.2. Size:486K  dynex
dim250plm33-tl.pdf pdf_icon

DIM250PHM33-TL

DIM250PLM33-TL000 IGBT Chopper Module DS6115-1 July 2013 (LN30664) FEATURES KEY PARAMETERS Low VCE(sat) Device VCES 3300V VCE(sat) * (typ) 2.0V 10s Short Circuit Withstand IC (max) 250A High Thermal Cycling Capability IC(PK) (max) 500A High Current Density Enhanced DMOS SPT * Measured at the auxiliary terminals Isolated AlSiC Base with AlN Subs

Datasheet: DIM1800ESM12-A , DIM1800ESS12-A , DIM200PHM33-F , DIM200PKM33-F , DIM200PLM33-F , DIM2400ESM12-A , DIM2400ESM17-A , DIM2400ESS12-A , STGB10NB37LZ , DIM250PHM33-TS , DIM250PKM33-TL , DIM250PKM33-TS , DIM250PLM33-TL , DIM250PLM33-TS , DIM400DCM17-A , DIM400DDM12-A , DIM400DDM17-A .

History: MMG100DR120B | MKI100-12F8 | 1MBH50D-060 | F4-75R12MS4 | FGH40T65UQDF | MIXA10W1200TML | HGT1S12N60A4S

Keywords - DIM250PHM33-TL transistor datasheet

 DIM250PHM33-TL cross reference
 DIM250PHM33-TL equivalent finder
 DIM250PHM33-TL lookup
 DIM250PHM33-TL substitution
 DIM250PHM33-TL replacement

 

 
Back to Top

 


 
.