DIM250PKM33-TS - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

DIM250PKM33-TS000 IGBT Chopper Module Replaces DS6106-1 DS6106-2 July 2013 (LN30763) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VCES 3300V VCE(sat) * (typ) 2.2V High Thermal Cycling Capability IC (max) 250A High Current Density Enhanced DMOS SPT IC(PK) (max) 500A Isolated AlSiC Base with AlN Substrates * Measured at the auxiliary terminals

DIM250PKM33-TL000 IGBT Chopper Module DS6117-1 July 2013 (LN30666) FEATURES KEY PARAMETERS Low VCE(sat) Device VCES 3300V VCE(sat) * (typ) 2.0V 10s Short Circuit Withstand IC (max) 250A High Thermal Cycling Capability IC(PK) (max) 500A High Current Density Enhanced DMOS SPT * Measured at the auxiliary terminals Isolated AlSiC Base with AlN Subs

DIM250PLM33-TL000 IGBT Chopper Module DS6115-1 July 2013 (LN30664) FEATURES KEY PARAMETERS Low VCE(sat) Device VCES 3300V VCE(sat) * (typ) 2.0V 10s Short Circuit Withstand IC (max) 250A High Thermal Cycling Capability IC(PK) (max) 500A High Current Density Enhanced DMOS SPT * Measured at the auxiliary terminals Isolated AlSiC Base with AlN Subs

DIM250PHM33-TL000 Half Bridge IGBT Module DS6116-1 July 2013 (LN30665) FEATURES KEY PARAMETERS Low VCE(sat) Device VCES 3300V VCE(sat) * (typ) 2.0V 10s Short Circuit Withstand IC (max) 250A High Thermal Cycling Capability IC(PK) (max) 500A High Current Density Enhanced DMOS SPT * Measured at the auxiliary terminals Isolated AlSiC Base with AlN

DIM250PHM33-TS000 Half Bridge IGBT Module DS6092-1 April 2013 (LN30402) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VCES 3300V VCE(sat) * (typ) 2.2V High Thermal Cycling Capability IC (max) 250A High Current Density Enhanced DMOS SPT IC(PK) (max) 500A Isolated AlSiC Base with AlN Substrates * Measured at the auxiliary terminals APPLICATIONS

DIM250PLM33-TS000 IGBT Chopper Module Replaces DS6108-1 DS6108-2 July 2013 (LN30764) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VCES 3300V VCE(sat) * (typ) 2.2V High Thermal Cycling Capability IC (max) 250A High Current Density Enhanced DMOS SPT IC(PK) (max) 500A Isolated AlSiC Base with AlN Substrates * Measured at the auxiliary terminals