All IGBT. DIM250PKM33-TS Datasheet

 

DIM250PKM33-TS IGBT. Datasheet pdf. Equivalent

Type Designator: DIM250PKM33-TS

Type of IGBT Channel: N

Maximum Power Dissipation (Pc), W: 2600

Maximum Collector-Emitter Voltage |Vce|, V: 3300

Collector-Emitter saturation Voltage |Vcesat|, V: 2.2

Maximum Gate-Emitter Voltage |Veg|, V: 20

Maximum Collector Current |Ic|, A: 250

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 400

Package: MODULE

DIM250PKM33-TS Transistor Equivalent Substitute - IGBT Cross-Reference Search

DIM250PKM33-TS IGBT. Datasheet pdf. Equivalent

Type Designator: DIM250PKM33-TS

Type of IGBT Channel: N

Maximum Power Dissipation (Pc), W: 2600

Maximum Collector-Emitter Voltage |Vce|, V: 3300

Collector-Emitter saturation Voltage |Vcesat|, V: 2.2

Maximum Gate-Emitter Voltage |Veg|, V: 20

Maximum Collector Current |Ic|, A: 250

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 400

Package: MODULE

DIM250PKM33-TS Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

DIM250PKM33-TS Datasheet (PDF)

0.1. dim250pkm33-ts.pdf Size:487K _dynex

DIM250PKM33-TS
DIM250PKM33-TS

DIM250PKM33-TS000 IGBT Chopper Module Replaces DS6106-1 DS6106-2 July 2013 (LN30763) FEATURES KEY PARAMETERS  10µs Short Circuit Withstand VCES 3300V VCE(sat) * (typ) 2.2V  High Thermal Cycling Capability IC (max) 250A  High Current Density Enhanced DMOS SPT IC(PK) (max) 500A  Isolated AlSiC Base with AlN Substrates * Measured at the auxiliary terminals

1.1. dim250pkm33-tl.pdf Size:486K _dynex

DIM250PKM33-TS
DIM250PKM33-TS

DIM250PKM33-TL000 IGBT Chopper Module DS6117-1 July 2013 (LN30666) FEATURES KEY PARAMETERS  Low VCE(sat) Device VCES 3300V VCE(sat) * (typ) 2.0V  10µs Short Circuit Withstand IC (max) 250A  High Thermal Cycling Capability IC(PK) (max) 500A  High Current Density Enhanced DMOS SPT * Measured at the auxiliary terminals  Isolated AlSiC Base with AlN Subs

 7.1. dim250phm33-tl.pdf Size:465K _dynex

DIM250PKM33-TS
DIM250PKM33-TS

DIM250PHM33-TL000 Half Bridge IGBT Module DS6116-1 July 2013 (LN30665) FEATURES KEY PARAMETERS  Low VCE(sat) Device VCES 3300V VCE(sat) * (typ) 2.0V  10µs Short Circuit Withstand IC (max) 250A  High Thermal Cycling Capability IC(PK) (max) 500A  High Current Density Enhanced DMOS SPT * Measured at the auxiliary terminals  Isolated AlSiC Base with AlN

7.2. dim250plm33-ts.pdf Size:486K _dynex

DIM250PKM33-TS
DIM250PKM33-TS

DIM250PLM33-TS000 IGBT Chopper Module Replaces DS6108-1 DS6108-2 July 2013 (LN30764) FEATURES KEY PARAMETERS  10µs Short Circuit Withstand VCES 3300V VCE(sat) * (typ) 2.2V  High Thermal Cycling Capability IC (max) 250A  High Current Density Enhanced DMOS SPT IC(PK) (max) 500A  Isolated AlSiC Base with AlN Substrates * Measured at the auxiliary terminals

 7.3. dim250plm33-tl.pdf Size:486K _dynex

DIM250PKM33-TS
DIM250PKM33-TS

DIM250PLM33-TL000 IGBT Chopper Module DS6115-1 July 2013 (LN30664) FEATURES KEY PARAMETERS  Low VCE(sat) Device VCES 3300V VCE(sat) * (typ) 2.0V  10µs Short Circuit Withstand IC (max) 250A  High Thermal Cycling Capability IC(PK) (max) 500A  High Current Density Enhanced DMOS SPT * Measured at the auxiliary terminals  Isolated AlSiC Base with AlN Subs

7.4. dim250phm33-ts.pdf Size:465K _dynex

DIM250PKM33-TS
DIM250PKM33-TS

DIM250PHM33-TS000 Half Bridge IGBT Module DS6092-1 April 2013 (LN30402) FEATURES KEY PARAMETERS  10µs Short Circuit Withstand VCES 3300V VCE(sat) * (typ) 2.2V  High Thermal Cycling Capability IC (max) 250A  High Current Density Enhanced DMOS SPT IC(PK) (max) 500A  Isolated AlSiC Base with AlN Substrates * Measured at the auxiliary terminals APPLICATIONS

Datasheet: DIM200PKM33-F , DIM200PLM33-F , DIM2400ESM12-A , DIM2400ESM17-A , DIM2400ESS12-A , DIM250PHM33-TL , DIM250PHM33-TS , DIM250PKM33-TL , 20N60C3DR , DIM250PLM33-TL , DIM250PLM33-TS , DIM400DCM17-A , DIM400DDM12-A , DIM400DDM17-A , DIM400DDS12-A , DIM400GCM33-F , DIM400GDM33-F .

 

 
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