DIM500GCM33-TS Todos los transistores

 

DIM500GCM33-TS - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DIM500GCM33-TS
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 5200 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 3300 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 500 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.2 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 400 nS
   Paquete / Cubierta: MODULE
     - Selección de transistores por parámetros

 

DIM500GCM33-TS Datasheet (PDF)

 ..1. Size:532K  dynex
dim500gcm33-ts.pdf pdf_icon

DIM500GCM33-TS

DIM500GCM33-TS000 IGBT Chopper Module Replaces DS6098-1 DS6098-2 January 2014 (LN31263) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VCES 3300V VCE(sat) * (typ) 2.2V High Thermal Cycling Capability IC (max) 500A High Current Density Enhanced DMOS SPT IC(PK) (max) 1000A Isolated AlSiC Base With AlN Substrates * Measured at the auxiliary terminal

 1.1. Size:532K  dynex
dim500gcm33-tl.pdf pdf_icon

DIM500GCM33-TS

DIM500GCM33-TL000 IGBT Chopper Module Replaces DS6114-1 DS6114-2 January 2014 (LN31264) FEATURES KEY PARAMETERS Low VCE(sat) Device VCES 3300V VCE(sat) * (typ) 2.0V 10s Short Circuit Withstand IC (max) 500A High Thermal Cycling Capability IC(PK) (max) 1000A High Current Density Enhanced DMOS SPT * Measured at the auxiliary terminals Isolated AlS

 7.1. Size:522K  dynex
dim500gdm33-tl.pdf pdf_icon

DIM500GCM33-TS

DIM500GDM33-TL000 Dual Switch IGBT Module Replaces DS6113-1 DS6113-2 January 2014 (LN31251) FEATURES KEY PARAMETERS Low VCE(sat) Device VCES 3300V VCE(sat) * (typ) 2.0V 10s Short Circuit Withstand IC (max) 500A High Thermal Cycling Capability IC(PK) (max) 1000A High Current Density Enhanced DMOS SPT * Measured at the auxiliary terminals Isolated

 7.2. Size:522K  dynex
dim500gdm33-ts.pdf pdf_icon

DIM500GCM33-TS

DIM500GDM33-TS000 Dual Switch IGBT Module Replaces DS6097-1 DS6097-2 January 2014 (LN31252) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VCES 3300V VCE(sat) * (typ) 2.2V High Thermal Cycling Capability IC (max) 500A High Current Density Enhanced DMOS SPT IC(PK) (max) 1000A Isolated AlSiC Base with AlN Substrates * Measured at the auxiliary term

Otros transistores... DIM400GDM33-F , DIM400NSM33-F , DIM400PBM17-A , DIM400PHM17-A , DIM400XCM33-F , DIM400XCM45-TS , DIM400XCM45-TS001 , DIM500GCM33-TL , IKW40T120 , DIM500GDM33-TL , DIM500GDM33-TS , DIM600DCM17-A , DIM600DDM17-A , DIM600DDS12-A , DIM800DCM12-A , DIM800DCM17-A , DIM800DCS12-A .

History: JNG25N120AI | GA150TD120U | MG150HF12MIC2 | AUIRG4BC30S-S | STGW20V60DF | SKM400GA124D | 6MBP25VBA120-50

 

 
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