DIM500GCM33-TS Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: DIM500GCM33-TS  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 5200 W

|Vce|ⓘ - Tensión máxima colector-emisor: 3300 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 500 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.2 V @25℃

trⓘ - Tiempo de subida, typ: 400 nS

Encapsulados: MODULE

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DIM500GCM33-TS datasheet

 ..1. Size:532K  dynex
 dim500gcm33-ts.pdf pdf_icon

DIM500GCM33-TS

DIM500GCM33-TS000 IGBT Chopper Module Replaces DS6098-1 DS6098-2 January 2014 (LN31263) FEATURES KEY PARAMETERS 10 s Short Circuit Withstand VCES 3300V VCE(sat) * (typ) 2.2V High Thermal Cycling Capability IC (max) 500A High Current Density Enhanced DMOS SPT IC(PK) (max) 1000A Isolated AlSiC Base With AlN Substrates * Measured at the auxiliary terminal

 1.1. Size:532K  dynex
 dim500gcm33-tl.pdf pdf_icon

DIM500GCM33-TS

DIM500GCM33-TL000 IGBT Chopper Module Replaces DS6114-1 DS6114-2 January 2014 (LN31264) FEATURES KEY PARAMETERS Low VCE(sat) Device VCES 3300V VCE(sat) * (typ) 2.0V 10 s Short Circuit Withstand IC (max) 500A High Thermal Cycling Capability IC(PK) (max) 1000A High Current Density Enhanced DMOS SPT * Measured at the auxiliary terminals Isolated AlS

 7.1. Size:522K  dynex
 dim500gdm33-tl.pdf pdf_icon

DIM500GCM33-TS

DIM500GDM33-TL000 Dual Switch IGBT Module Replaces DS6113-1 DS6113-2 January 2014 (LN31251) FEATURES KEY PARAMETERS Low VCE(sat) Device VCES 3300V VCE(sat) * (typ) 2.0V 10 s Short Circuit Withstand IC (max) 500A High Thermal Cycling Capability IC(PK) (max) 1000A High Current Density Enhanced DMOS SPT * Measured at the auxiliary terminals Isolated

 7.2. Size:522K  dynex
 dim500gdm33-ts.pdf pdf_icon

DIM500GCM33-TS

DIM500GDM33-TS000 Dual Switch IGBT Module Replaces DS6097-1 DS6097-2 January 2014 (LN31252) FEATURES KEY PARAMETERS 10 s Short Circuit Withstand VCES 3300V VCE(sat) * (typ) 2.2V High Thermal Cycling Capability IC (max) 500A High Current Density Enhanced DMOS SPT IC(PK) (max) 1000A Isolated AlSiC Base with AlN Substrates * Measured at the auxiliary term

MOSTRAR MÁS

Otros transistores... DIM400GDM33-F, DIM400NSM33-F, DIM400PBM17-A, DIM400PHM17-A, DIM400XCM33-F, DIM400XCM45-TS, DIM400XCM45-TS001, DIM500GCM33-TL, TGAN20N135FD, DIM500GDM33-TL, DIM500GDM33-TS, DIM600DCM17-A, DIM600DDM17-A, DIM600DDS12-A, DIM800DCM12-A, DIM800DCM17-A, DIM800DCS12-A