DIM800DCM12-A IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DIM800DCM12-A
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 6940 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 800 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.2 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 250 nS
Paquete / Cubierta: MODULE
Búsqueda de reemplazo de DIM800DCM12-A IGBT
DIM800DCM12-A PDF specs
dim800dcm12-a.pdf
DIM800DCM12-A000 DIM800DCM12-A000 IGBT Chopper Module Replaces July 2002 version DS5548-2.0 DS5548- FEATURES KEY PARAMETERS VCES 1200V 10 s Short Circuit Withstand VCE(sat)* (typ) 2.2V High Thermal Cycling Capability IC (max) 800A IC(PK) (max) 1600A Non Punch Through Silicon *(measured at the power busbars and not the auxiliary terminals) Isolated MMC Base with AlN Substrates ... See More ⇒
dim800dcm17-a.pdf
DIM800DCM17-A000 IGBT Chopper Module Replaces DS5444-4.2 DS5444-5 April 2011 (LN26752) FEATURES KEY PARAMETERS 10 s Short Circuit Withstand VCES 1700V VCE(sat) * (typ) 2.7V High Thermal Cycling Capability IC (max) 800A Non Punch Through Silicon IC(PK) (max) 1600A Isolated AlSiC Base With AlN Substrates * Measured at the power busbars, not the auxiliary... See More ⇒
dim800dcs12-a.pdf
DIM800DCS12-A000 IGBT Chopper Module DS5839- 1.1 June 2005 (LN24042) KEY PARAMETERS FEATURES VCES 1200V 10 s Short Circuit Withstand VCE (sat)* (typ) 2.2V IC (max) 800A Non Punch Through Silicon IC(PK) (max) 1600A Isolated Copper Baseplate * (measured at the power busbars and not the auxiliary terminals) Lead Free construction APPLICATIONS Chopper DC Mo... See More ⇒
dim800dds12-a.pdf
DIM800DDS12-A000 Dual Switch IGBT Module Replaces DS5540-2.2 DS5540-3 November 2009 (LN26746) FEATURES KEY PARAMETERS 28 0.5 6 x O7 0.2 10 s Short Circuit Withstand 16 0.2 18 VCES 1200V VCE(sat) * (typ) 2.2 V High Thermal Cycling Capability screwing depth 0.2 0.2 40 44 IC (max) 800A max 8 Non Punch Through Silicon 0.2 0.2 53 57 IC(PK) ... See More ⇒
Otros transistores... DIM400XCM45-TS001 , DIM500GCM33-TL , DIM500GCM33-TS , DIM500GDM33-TL , DIM500GDM33-TS , DIM600DCM17-A , DIM600DDM17-A , DIM600DDS12-A , TGD30N40P , DIM800DCM17-A , DIM800DCS12-A , DIM800DDM12-A , DIM800DDM17-A , DIM800DDS12-A , DIM800ECM33-F , DIM800FSM12-A , DIM800FSM17-A .
History: CM1200HCB-34N | CM150DU-24NFH | MG100Q2YS50 | MMG40H120XB6TN | BSM150GB170DN2 | CM100TU-12F
History: CM1200HCB-34N | CM150DU-24NFH | MG100Q2YS50 | MMG40H120XB6TN | BSM150GB170DN2 | CM100TU-12F
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
Popular searches
c1740 transistor | c828 transistor | c4467 | c2383 transistor | 2n3055 equivalent | s9015 datasheet | 2n6488 | 30j127 datasheet







