DIM800DCM12-A - аналоги, параметры транзистора

Технические параметры DIM800DCM12-A

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DIM800DCM12-A000 DIM800DCM12-A000 IGBT Chopper Module Replaces July 2002 version DS5548-2.0 DS5548- FEATURES KEY PARAMETERS VCES 1200V 10 s Short Circuit Withstand VCE(sat)* (typ) 2.2V High Thermal Cycling Capability IC (max) 800A IC(PK) (max) 1600A Non Punch Through Silicon *(measured at the power busbars and not the auxiliary terminals) Isolated MMC Base with AlN Substrates

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DIM800DCM17-A000 IGBT Chopper Module Replaces DS5444-4.2 DS5444-5 April 2011 (LN26752) FEATURES KEY PARAMETERS 10 s Short Circuit Withstand VCES 1700V VCE(sat) * (typ) 2.7V High Thermal Cycling Capability IC (max) 800A Non Punch Through Silicon IC(PK) (max) 1600A Isolated AlSiC Base With AlN Substrates * Measured at the power busbars, not the auxiliary

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DIM800DCS12-A000 IGBT Chopper Module DS5839- 1.1 June 2005 (LN24042) KEY PARAMETERS FEATURES VCES 1200V 10 s Short Circuit Withstand VCE (sat)* (typ) 2.2V IC (max) 800A Non Punch Through Silicon IC(PK) (max) 1600A Isolated Copper Baseplate * (measured at the power busbars and not the auxiliary terminals) Lead Free construction APPLICATIONS Chopper DC Mo

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DIM800DDS12-A000 Dual Switch IGBT Module Replaces DS5540-2.2 DS5540-3 November 2009 (LN26746) FEATURES KEY PARAMETERS 28 0.5 6 x O7 0.2 10 s Short Circuit Withstand 16 0.2 18 VCES 1200V VCE(sat) * (typ) 2.2 V High Thermal Cycling Capability screwing depth 0.2 0.2 40 44 IC (max) 800A max 8 Non Punch Through Silicon 0.2 0.2 53 57 IC(PK)