Справочник IGBT. DIM800DCM12-A

 

DIM800DCM12-A - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: DIM800DCM12-A
   Тип транзистора: IGBT + Diode
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 6940 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 800 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2.2 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 6.5 V
   Tjⓘ - Максимальная температура перехода: 150 ℃
   trⓘ - Время нарастания типовое: 250 nS
   Qgⓘ - Общий заряд затвора, typ: 9000 nC
   Тип корпуса: MODULE

 Аналог (замена) для DIM800DCM12-A

 

 

DIM800DCM12-A Datasheet (PDF)

 ..1. Size:201K  dynex
 dim800dcm12-a.pdf

DIM800DCM12-A DIM800DCM12-A

DIM800DCM12-A000DIM800DCM12-A000IGBT Chopper ModuleReplaces July 2002 version DS5548-2.0 DS5548-FEATURES KEY PARAMETERSVCES 1200V 10s Short Circuit WithstandVCE(sat)* (typ) 2.2V High Thermal Cycling CapabilityIC (max) 800AIC(PK) (max) 1600A Non Punch Through Silicon*(measured at the power busbars and not the auxiliary terminals) Isolated MMC Base with AlN Substrates

 4.1. Size:445K  dynex
 dim800dcm17-a.pdf

DIM800DCM12-A DIM800DCM12-A

DIM800DCM17-A000 IGBT Chopper Module Replaces DS5444-4.2 DS5444-5 April 2011 (LN26752) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VCES 1700V VCE(sat) * (typ) 2.7V High Thermal Cycling Capability IC (max) 800A Non Punch Through Silicon IC(PK) (max) 1600A Isolated AlSiC Base With AlN Substrates * Measured at the power busbars, not the auxiliary

 6.1. Size:814K  dynex
 dim800dcs12-a.pdf

DIM800DCM12-A DIM800DCM12-A

DIM800DCS12-A000IGBT Chopper ModuleDS5839- 1.1 June 2005 (LN24042)KEY PARAMETERSFEATURESVCES 1200V 10s Short Circuit WithstandVCE (sat)* (typ) 2.2VIC (max) 800A Non Punch Through SiliconIC(PK) (max) 1600A Isolated Copper Baseplate*(measured at the power busbars and not the auxiliary terminals) Lead Free constructionAPPLICATIONS Chopper DC Mo

 7.1. Size:389K  dynex
 dim800dds12-a.pdf

DIM800DCM12-A DIM800DCM12-A

DIM800DDS12-A000 Dual Switch IGBT Module Replaces DS5540-2.2 DS5540-3 November 2009 (LN26746) FEATURES KEY PARAMETERS 280.56 x O70.2 10s Short Circuit Withstand 16 0.218VCES 1200V VCE(sat) * (typ) 2.2 V High Thermal Cycling Capability screwing depth0.2 0.240 44IC (max) 800A max 8 Non Punch Through Silicon 0.2 0.253 57IC(PK)

 7.2. Size:390K  dynex
 dim800ddm12-a.pdf

DIM800DCM12-A DIM800DCM12-A

DIM800DDM12-A000 Dual Switch IGBT Module Replaces DS5528-3.0 DS5528-4 October 2009 (LN26748) FEATURES KEY PARAMETERS 280.56 x O70.2 10s Short Circuit Withstand 16 0.218VCES 1200V VCE(sat) * (typ) 2.2 V High Thermal Cycling Capability screwing depth0.2 0.240 44IC (max) 800A max 8 Non Punch Through Silicon 0.2 0.253 57IC(PK) (

 7.3. Size:393K  dynex
 dim800ddm17-a.pdf

DIM800DCM12-A DIM800DCM12-A

DIM800DDM17-A000 Dual Switch IGBT Module Replaces DS5433-4.1 July 2002 DS5433-5 June 2009 (LN26751) FEATURES KEY PARAMETERS 280.56 x O70.2 10s Short Circuit Withstand 16 0.218VCES 1700V VCE(sat) * (typ) 2.7 V High Thermal Cycling Capability screwing depth0.2 0.240 44IC (max) 800A max 8 Non Punch Through Silicon 0.2 0.253 57I

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