MG06400D-BN4MM Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MG06400D-BN4MM  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 1250 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 500 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.45 V @25℃

trⓘ - Tiempo de subida, typ: 50 nS

Encapsulados: MODULE

  📄📄 Copiar 

 Búsqueda de reemplazo de MG06400D-BN4MM IGBT

- Selecciónⓘ de transistores por parámetros

 

MG06400D-BN4MM datasheet

 ..1. Size:1752K  littelfuse
mg06400d-bn4mm.pdf pdf_icon

MG06400D-BN4MM

Power Module 600V IGBT Family RoHS MG06400D-BN4MM Series 400A Dual IGBT Features High short circuit Free wheeling diodes capability, self limiting with fast and soft reverse short circuit current recovery VCE(sat) with positive Low switching losses temperature coefficient Fast switching and short tail current Applications Motor drives SMPS and UP

 3.1. Size:2234K  littelfuse
mg06400d-bn1mm.pdf pdf_icon

MG06400D-BN4MM

Power Module 600V IGBT Family RoHS MG06400D-BN1MM Series 400A Dual IGBT Features Ultra low loss Positive temperature coefficient High ruggedness High short circuit capability Applications Motor drives SMPS and UPS Inverter Welder Agency Approvals Converter Induction Heating AGENCY AGENCY FILE NUMBER E71639 Module Characteristics (T

Otros transistores... DIM800XSM45-TS001, MBN400GR12A, MBN600GR12A, MG06100S-BR1MM, MG06150S-BN4MM, MG06200S-BN4MM, MG06300D-BN4MM, MG06400D-BN1MM, FGH40N60UFD, MG06600WB-BN4MM, MG100Q2YS40, MG100Q2YS50, MG100Q2YS51, MG100Q2YS65H, MG10Q6ES50A, MG12100D-BA1MM, MG12100S-BN2MM