MG06400D-BN4MM - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MG06400D-BN4MM
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Máxima potencia disipada (Pc), W: 1250
Tensión máxima colector-emisor |Vce|, V: 600
Tensión máxima puerta-emisor |Vge|, V: 20
Colector de Corriente Continua a 25℃ |Ic|, A: 500
Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 1.45
Tensión máxima de puerta-umbral |VGE(th)|, V: 6.5
Temperatura máxima de unión (Tj), ℃: 175
Tiempo de subida (tr), typ, nS: 50
Carga total de la puerta (Qg), typ, nC: 4300
Paquete / Cubierta: MODULE
Búsqueda de reemplazo de MG06400D-BN4MM - IGBT
MG06400D-BN4MM Datasheet (PDF)
mg06400d-bn4mm.pdf
Power Module600V IGBT FamilyRoHSMG06400D-BN4MM Series 400A Dual IGBT Features High short circuit Free wheeling diodes capability, self limiting with fast and soft reverse short circuit current recovery VCE(sat) with positive Low switching lossestemperature coefficient Fast switching and short tail currentApplications Motor drives SMPS and UP
mg06400d-bn1mm.pdf
Power Module600V IGBT FamilyRoHSMG06400D-BN1MM Series 400A Dual IGBT Features Ultra low loss Positive temperature coefficient High ruggedness High short circuit capabilityApplications Motor drives SMPS and UPS Inverter WelderAgency Approvals Converter Induction HeatingAGENCY AGENCY FILE NUMBERE71639Module Characteristics (T
Otros transistores... DIM800XSM45-TS001 , MBN400GR12A , MBN600GR12A , MG06100S-BR1MM , MG06150S-BN4MM , MG06200S-BN4MM , MG06300D-BN4MM , MG06400D-BN1MM , GT30J124 , MG06600WB-BN4MM , MG100Q2YS40 , MG100Q2YS50 , MG100Q2YS51 , MG100Q2YS65H , MG10Q6ES50A , MG12100D-BA1MM , MG12100S-BN2MM .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: BRGH25N120D | BRGH15N120D | BRGB6N65DP | BRG60N60D | BRG10N120D | TT100N120PF1E | TT075U065FQB | TT075U065FBC | TT075N120EBC | TT075N065EQ | TT060U065FQ