MG12105S-BA1MM IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MG12105S-BA1MM
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 690 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 150 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.8 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 60 nS
Coesⓘ - Capacitancia de salida, typ: 520 pF
Paquete / Cubierta: MODULE
Búsqueda de reemplazo de MG12105S-BA1MM IGBT
MG12105S-BA1MM PDF specs
mg12105s-ba1mm.pdf
Power Module 1200V 100A IGBT Module RoHS MG12105S-BA1MM Features Ultra Low Loss Positive Temperature Coefficient High Ruggedness With Fast Free-Wheeling High Short Circuit Diodes Capability Applications Inverter SMPS and UPS Converter Induction Heating Welder Agency Approvals AGENCY AGENCY FILE NUMBER E71639 Module Characteristi... See More ⇒
mg12100d-ba1mm.pdf
Power Module 1200V 100A IGBT Module RoHS MG12100D-BA1MM Features Ultra low loss Positive temperature coefficient High ruggedness With fast free-wheeling High short circuit diodes capability Applications Inverter SMPS and UPS Converter Induction heating Welder Agency Approvals AGENCY AGENCY FILE NUMBER E71639 Module Characteristic... See More ⇒
mg12100w-xn2mm.pdf
Power Module 1200V 100A IGBT Module RoHS MG12100W-XN2MM Features High level of integration Free wheeling diodes with fast and soft reverse IGBT3 CHIP(Trench+Field recovery Stop technology) Solderable pins for PCB Low saturation voltage mounting and positive temperature coefficient Temperature sense included Fast switching and short tail curr... See More ⇒
mg12100s-bn2mm.pdf
Power Module 1200V 100A IGBT Module RoHS MG12100S-BN2MM Features High short circuit Fast switching and short capability, self limiting tail current short circuit current Free wheeling diodes IGBT3 CHIP(Trench+Field with fast and soft reverse Stop technology) recovery VCE(sat) with positive Low switching losses temperature coefficient Applications Age... See More ⇒
Otros transistores... MG100Q2YS40 , MG100Q2YS50 , MG100Q2YS51 , MG100Q2YS65H , MG10Q6ES50A , MG12100D-BA1MM , MG12100S-BN2MM , MG12100W-XN2MM , RJP30H2A , MG12150D-BA1MM , MG12150S-BN2MM , MG12150W-XN2MM , MG12200D-BA1MM , MG12200D-BN2MM , MG12225WB-BN2MM , MG1225H-XBN2MM , MG1225H-XN2MM .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
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