MG12105S-BA1MM Todos los transistores

 

MG12105S-BA1MM - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MG12105S-BA1MM
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 690 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 150 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.8 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 60 nS
   Coesⓘ - Capacitancia de salida, typ: 520 pF
   Paquete / Cubierta: MODULE
 

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MG12105S-BA1MM Datasheet (PDF)

 ..1. Size:1799K  littelfuse
mg12105s-ba1mm.pdf pdf_icon

MG12105S-BA1MM

Power Module1200V 100A IGBT ModuleRoHSMG12105S-BA1MM Features Ultra Low Loss Positive Temperature Coefficient High Ruggedness With Fast Free-Wheeling High Short Circuit DiodesCapabilityApplications Inverter SMPS and UPS Converter Induction Heating WelderAgency ApprovalsAGENCY AGENCY FILE NUMBERE71639Module Characteristi

 8.1. Size:1802K  littelfuse
mg12100d-ba1mm.pdf pdf_icon

MG12105S-BA1MM

Power Module1200V 100A IGBT ModuleRoHSMG12100D-BA1MMFeatures Ultra low loss Positive temperature coefficient High ruggedness With fast free-wheeling High short circuit diodescapabilityApplications Inverter SMPS and UPS Converter Induction heating WelderAgency ApprovalsAGENCY AGENCY FILE NUMBERE71639Module Characteristic

 8.2. Size:1460K  littelfuse
mg12100w-xn2mm.pdf pdf_icon

MG12105S-BA1MM

Power Module1200V 100A IGBT ModuleRoHSMG12100W-XN2MM Features High level of integration Free wheeling diodes with fast and soft reverse IGBT3 CHIP(Trench+Field recoveryStop technology) Solderable pins for PCB Low saturation voltage mountingand positive temperature coefficient Temperature sense included Fast switching and short tail curr

 8.3. Size:1328K  littelfuse
mg12100s-bn2mm.pdf pdf_icon

MG12105S-BA1MM

Power Module1200V 100A IGBT ModuleRoHSMG12100S-BN2MMFeatures High short circuit Fast switching and short capability, self limiting tail currentshort circuit current Free wheeling diodes IGBT3 CHIP(Trench+Field with fast and soft reverse Stop technology) recovery VCE(sat) with positive Low switching lossestemperature coefficientApplicationsAge

Otros transistores... MG100Q2YS40 , MG100Q2YS50 , MG100Q2YS51 , MG100Q2YS65H , MG10Q6ES50A , MG12100D-BA1MM , MG12100S-BN2MM , MG12100W-XN2MM , FGH60N60SMD , MG12150D-BA1MM , MG12150S-BN2MM , MG12150W-XN2MM , MG12200D-BA1MM , MG12200D-BN2MM , MG12225WB-BN2MM , MG1225H-XBN2MM , MG1225H-XN2MM .

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