All IGBT. MG12105S-BA1MM Datasheet

 

MG12105S-BA1MM IGBT. Datasheet pdf. Equivalent


   Type Designator: MG12105S-BA1MM
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 690 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 150 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 7 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 60 nS
   Coesⓘ - Output Capacitance, typ: 520 pF
   Qgⓘ - Total Gate Charge, typ: 1050 nC
   Package: MODULE

 MG12105S-BA1MM Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

MG12105S-BA1MM Datasheet (PDF)

 ..1. Size:1799K  littelfuse
mg12105s-ba1mm.pdf

MG12105S-BA1MM
MG12105S-BA1MM

Power Module1200V 100A IGBT ModuleRoHSMG12105S-BA1MM Features Ultra Low Loss Positive Temperature Coefficient High Ruggedness With Fast Free-Wheeling High Short Circuit DiodesCapabilityApplications Inverter SMPS and UPS Converter Induction Heating WelderAgency ApprovalsAGENCY AGENCY FILE NUMBERE71639Module Characteristi

 8.1. Size:1802K  littelfuse
mg12100d-ba1mm.pdf

MG12105S-BA1MM
MG12105S-BA1MM

Power Module1200V 100A IGBT ModuleRoHSMG12100D-BA1MMFeatures Ultra low loss Positive temperature coefficient High ruggedness With fast free-wheeling High short circuit diodescapabilityApplications Inverter SMPS and UPS Converter Induction heating WelderAgency ApprovalsAGENCY AGENCY FILE NUMBERE71639Module Characteristic

 8.2. Size:1460K  littelfuse
mg12100w-xn2mm.pdf

MG12105S-BA1MM
MG12105S-BA1MM

Power Module1200V 100A IGBT ModuleRoHSMG12100W-XN2MM Features High level of integration Free wheeling diodes with fast and soft reverse IGBT3 CHIP(Trench+Field recoveryStop technology) Solderable pins for PCB Low saturation voltage mountingand positive temperature coefficient Temperature sense included Fast switching and short tail curr

 8.3. Size:1328K  littelfuse
mg12100s-bn2mm.pdf

MG12105S-BA1MM
MG12105S-BA1MM

Power Module1200V 100A IGBT ModuleRoHSMG12100S-BN2MMFeatures High short circuit Fast switching and short capability, self limiting tail currentshort circuit current Free wheeling diodes IGBT3 CHIP(Trench+Field with fast and soft reverse Stop technology) recovery VCE(sat) with positive Low switching lossestemperature coefficientApplicationsAge

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