MG12150W-XN2MM Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MG12150W-XN2MM  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 625 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 200 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.7 V @25℃

trⓘ - Tiempo de subida, typ: 30 nS

Encapsulados: MODULE

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MG12150W-XN2MM datasheet

 ..1. Size:1452K  littelfuse
 mg12150w-xn2mm.pdf pdf_icon

MG12150W-XN2MM

Power Module 1200V 150A IGBT Module RoHS MG12150W-XN2MM Features High level of integration Free wheeling diodes with fast and soft reverse IGBT3 CHIP(Trench+Field recovery Stop technology) Solderable pins for PCB Low saturation voltage mounting and positive temperature coefficient Temperature sense included Fast switching and short tail curr

 7.1. Size:547K  littelfuse
 mg12150d-ba1mm.pdf pdf_icon

MG12150W-XN2MM

Power Module 1200V 150A IGBT Module RoHS MG12150D-BA1MM Features Ultra low loss Positive temperature coeficient High ruggedness With fast free-wheeling High short circuit diodes capability Applications Inverter SMPS and UPS Converter Induction heating Welder Agency Approvals AGENCY AGENCY FILE NUMBER E71639 Module Characteristics

 7.2. Size:1343K  littelfuse
 mg12150s-bn2mm.pdf pdf_icon

MG12150W-XN2MM

Power Module 1200V 150A IGBT Module RoHS MG12150S-BN2MM Features High short circuit Fast switching and short capability, self limiting tail current short circuit current Free wheeling diodes IGBT3 CHIP(Trench+Field with fast and soft reverse Stop technology) recovery VCE(sat) with positive Low switching losses temperature coefficient Applications Ag

 8.1. Size:1806K  littelfuse
 mg1215h-xbn2mm.pdf pdf_icon

MG12150W-XN2MM

Power Module 1200V 15A IGBT Module RoHS MG1215H-XBN2MM Features High level of Free wheeling diodes integration only one with fast and soft reverse power semiconductor recovery module required for the Industry standard package whole drive with insulated copper Low saturation voltage base plateand soldering and positive temperature pins for PCB mounting coeff

MOSTRAR MÁS

Otros transistores... MG100Q2YS65H, MG10Q6ES50A, MG12100D-BA1MM, MG12100S-BN2MM, MG12100W-XN2MM, MG12105S-BA1MM, MG12150D-BA1MM, MG12150S-BN2MM, SGT50T65FD1PT, MG12200D-BA1MM, MG12200D-BN2MM, MG12225WB-BN2MM, MG1225H-XBN2MM, MG1225H-XN2MM, MG12300D-BA1MM, MG12300D-BN2MM, MG12300D-BN3MM