Справочник IGBT. MG12150W-XN2MM

 

MG12150W-XN2MM Даташит. Аналоги. Параметры и характеристики.


   Наименование: MG12150W-XN2MM
   Тип транзистора: IGBT
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 625 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 200 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.7 V @25℃
   Tjⓘ - Максимальная температура перехода: 150 ℃
   trⓘ - Время нарастания типовое: 30 nS
   Тип корпуса: MODULE
     - подбор IGBT транзистора по параметрам

 

MG12150W-XN2MM Datasheet (PDF)

 ..1. Size:1452K  littelfuse
mg12150w-xn2mm.pdfpdf_icon

MG12150W-XN2MM

Power Module1200V 150A IGBT ModuleRoHSMG12150W-XN2MM Features High level of integration Free wheeling diodes with fast and soft reverse IGBT3 CHIP(Trench+Field recoveryStop technology) Solderable pins for PCB Low saturation voltage mountingand positive temperature coefficient Temperature sense included Fast switching and short tail curr

 7.1. Size:547K  littelfuse
mg12150d-ba1mm.pdfpdf_icon

MG12150W-XN2MM

Power Module1200V 150A IGBT ModuleRoHSMG12150D-BA1MMFeatures Ultra low loss Positive temperature coeficient High ruggedness With fast free-wheeling High short circuit diodescapabilityApplications Inverter SMPS and UPS Converter Induction heating WelderAgency ApprovalsAGENCY AGENCY FILE NUMBERE71639Module Characteristics

 7.2. Size:1343K  littelfuse
mg12150s-bn2mm.pdfpdf_icon

MG12150W-XN2MM

Power Module1200V 150A IGBT ModuleRoHSMG12150S-BN2MMFeatures High short circuit Fast switching and short capability, self limiting tail currentshort circuit current Free wheeling diodes IGBT3 CHIP(Trench+Field with fast and soft reverse Stop technology) recovery VCE(sat) with positive Low switching lossestemperature coefficientApplicationsAg

 8.1. Size:1806K  littelfuse
mg1215h-xbn2mm.pdfpdf_icon

MG12150W-XN2MM

Power Module1200V 15A IGBT ModuleRoHSMG1215H-XBN2MMFeatures High level of Free wheeling diodes integrationonly one with fast and soft reverse power semiconductor recoverymodule required for the Industry standard package whole drivewith insulated copper Low saturation voltage base plateand soldering and positive temperature pins for PCB mountingcoeff

Другие IGBT... MG100Q2YS65H , MG10Q6ES50A , MG12100D-BA1MM , MG12100S-BN2MM , MG12100W-XN2MM , MG12105S-BA1MM , MG12150D-BA1MM , MG12150S-BN2MM , CRG40T60AN3H , MG12200D-BA1MM , MG12200D-BN2MM , MG12225WB-BN2MM , MG1225H-XBN2MM , MG1225H-XN2MM , MG12300D-BA1MM , MG12300D-BN2MM , MG12300D-BN3MM .

History: AUIRGPS4067D1 | CM100RL-24NF | CM600DXL-24S | CM50YE13-12H | MMG200D120B6UC | 1MBI400S-120 | DM2G150SH6NE

 

 
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