MG12200D-BN2MM Todos los transistores

 

MG12200D-BN2MM - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MG12200D-BN2MM
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 1050 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 290 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.7 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 40 nS
   Paquete / Cubierta: MODULE
     - Selección de transistores por parámetros

 

MG12200D-BN2MM Datasheet (PDF)

 ..1. Size:1349K  littelfuse
mg12200d-bn2mm.pdf pdf_icon

MG12200D-BN2MM

Power Module1200V 200A IGBT ModuleRoHSMG12200D-BN2MMFeatures High short circuit Fast switching and short capability, self limiting tail currentshort circuit current Free wheeling diodes IGBT3 CHIP(Trench+Field with fast and soft reverse Stop technology) recovery VCE(sat) with positive Low switching lossestemperature coefficientApplications

 4.1. Size:1848K  littelfuse
mg12200d-ba1mm.pdf pdf_icon

MG12200D-BN2MM

Power Module1200V 200A IGBT ModuleRoHSMG12200D-BA1MMFeatures Ultra low loss Positive temperature coefficient High ruggedness With fast free-wheeling High short circuit diodescapabilityApplications Inverter SMPS and UPS Converter Induction heating WelderAgency ApprovalsAGENCY AGENCY FILE NUMBERE71639Module Characteristic

 9.1. Size:1640K  littelfuse
mg12225wb-bn2mm.pdf pdf_icon

MG12200D-BN2MM

Power Module1200V 225A IGBT ModuleRoHSMG12225WB-BN2MMFeatures IGBT3 CHIP(Trench+Field Free wheeling diodes Stop technology) with fast and soft reverse recovery Low saturation voltage and positive temperature Temperature sense coefficient included Fast switching and short tail currentApplications AC motor control Photovoltaic/Fuel cell Mot

 9.2. Size:1829K  littelfuse
mg1225h-xbn2mm.pdf pdf_icon

MG12200D-BN2MM

Power Module1200V 25A IGBT ModuleRoHSMG1225H-XBN2MMFeatures High level of Free wheeling diodes integrationonly one with fast and soft reverse power semiconductor recoverymodule required for the Industry standard package whole drivewith insulated copper Low saturation voltage base plateand soldering and positive temperature pins for PCB mountingcoeff

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