MG12200D-BN2MM - Аналоги. Основные параметры
Наименование: MG12200D-BN2MM
Тип транзистора: IGBT
Тип управляющего канала: N
Pc ⓘ - Максимальная рассеиваемая мощность: 1050 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic| ⓘ - Максимальный постоянный ток коллектора: 290 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.7 V @25℃
Tj ⓘ - Максимальная температура перехода: 150 ℃
tr ⓘ - Время нарастания типовое: 40 nS
Тип корпуса: MODULE
Аналог (замена) для MG12200D-BN2MM
Технические параметры MG12200D-BN2MM
mg12200d-bn2mm.pdf
Power Module 1200V 200A IGBT Module RoHS MG12200D-BN2MM Features High short circuit Fast switching and short capability, self limiting tail current short circuit current Free wheeling diodes IGBT3 CHIP(Trench+Field with fast and soft reverse Stop technology) recovery VCE(sat) with positive Low switching losses temperature coefficient Applications
mg12200d-ba1mm.pdf
Power Module 1200V 200A IGBT Module RoHS MG12200D-BA1MM Features Ultra low loss Positive temperature coefficient High ruggedness With fast free-wheeling High short circuit diodes capability Applications Inverter SMPS and UPS Converter Induction heating Welder Agency Approvals AGENCY AGENCY FILE NUMBER E71639 Module Characteristic
mg12225wb-bn2mm.pdf
Power Module 1200V 225A IGBT Module RoHS MG12225WB-BN2MM Features IGBT3 CHIP(Trench+Field Free wheeling diodes Stop technology) with fast and soft reverse recovery Low saturation voltage and positive temperature Temperature sense coefficient included Fast switching and short tail current Applications AC motor control Photovoltaic/Fuel cell Mot
mg1225h-xbn2mm.pdf
Power Module 1200V 25A IGBT Module RoHS MG1225H-XBN2MM Features High level of Free wheeling diodes integration only one with fast and soft reverse power semiconductor recovery module required for the Industry standard package whole drive with insulated copper Low saturation voltage base plateand soldering and positive temperature pins for PCB mounting coeff
Другие IGBT... MG12100D-BA1MM , MG12100S-BN2MM , MG12100W-XN2MM , MG12105S-BA1MM , MG12150D-BA1MM , MG12150S-BN2MM , MG12150W-XN2MM , MG12200D-BA1MM , RJP30E2DPP-M0 , MG12225WB-BN2MM , MG1225H-XBN2MM , MG1225H-XN2MM , MG12300D-BA1MM , MG12300D-BN2MM , MG12300D-BN3MM , MG12300WB-BN2MM , MG12400D-BN2MM .
History: BSM300GA120DN2S
History: BSM300GA120DN2S
Список транзисторов
Обновления
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
Popular searches
irf540z | ss8550 transistor | irfp240 mosfet | tip141 | 2n404 | 2n4250 | d882 transistor equivalent | 17n80c3






