MG1250S-BA1MM Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MG1250S-BA1MM  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 500 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.8 V @25℃

trⓘ - Tiempo de subida, typ: 60 nS

Coesⓘ - Capacitancia de salida, typ: 300 pF

Encapsulados: MODULE

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MG1250S-BA1MM datasheet

 ..1. Size:1766K  littelfuse
 mg1250s-ba1mm.pdf pdf_icon

MG1250S-BA1MM

Power Module 1200V 50A IGBT Module RoHS MG1250S-BA1MM Features Ultra Low Loss Positive Temperature Coefficient High Ruggedness With Fast Free-Wheeling High Short Circuit Diodes Capability Applications Inverter SMPS and UPS Converter Induction Heating Welder Agency Approvals AGENCY AGENCY FILE NUMBER E71639 Module Characteristics

 8.1. Size:1891K  littelfuse
 mg1250w-xbn2mm.pdf pdf_icon

MG1250S-BA1MM

Power Module Power Module 1200V 50A IGBT Module RoHS MG1250W-XBN2MM Features High level of Free wheeling diodes integration only one with fast and soft reverse power semiconductor recovery module required for the Industry standard whole drive package with insulated Low saturation voltage copper base plate and and positive temperature soldering pins for PC

 8.2. Size:1714K  littelfuse
 mg1250h-xn2mm.pdf pdf_icon

MG1250S-BA1MM

Power Module 1200V 50A IGBT Module RoHS MG1250H-XN2MM Features High level of integration Free wheeling diodes with fast and soft reverse IGBT3 CHIP(Trench+Field recovery Stop technology) Solderable pins for PCB Low saturation voltage mounting and positive temperature coefficient Temperature sense included Fast switching and short tail curren

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