MG1250S-BA1MM - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MG1250S-BA1MM
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Máxima potencia disipada (Pc), W: 500
Tensión máxima colector-emisor |Vce|, V: 1200
Tensión máxima puerta-emisor |Vge|, V: 20
Colector de Corriente Continua a 25℃ |Ic|, A: 80
Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 1.8
Tensión máxima de puerta-umbral |VGE(th)|, V: 7
Temperatura máxima de unión (Tj), ℃: 150
Tiempo de subida (tr), typ, nS: 60
Capacitancia de salida (Cc), typ, pF: 300
Carga total de la puerta (Qg), typ, nC: 611
Paquete / Cubierta: MODULE
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MG1250S-BA1MM Datasheet (PDF)
mg1250s-ba1mm.pdf
Power Module1200V 50A IGBT ModuleRoHSMG1250S-BA1MM Features Ultra Low Loss Positive Temperature Coefficient High Ruggedness With Fast Free-Wheeling High Short Circuit DiodesCapabilityApplications Inverter SMPS and UPS Converter Induction Heating WelderAgency ApprovalsAGENCY AGENCY FILE NUMBERE71639Module Characteristics
mg1250w-xbn2mm.pdf
Power ModulePower Module1200V 50A IGBT ModuleRoHSMG1250W-XBN2MM Features High level of Free wheeling diodes integrationonly one with fast and soft reverse power semiconductor recoverymodule required for the Industry standard whole drive package with insulated Low saturation voltage copper base plate and and positive temperature soldering pins for PC
mg1250h-xn2mm.pdf
Power Module1200V 50A IGBT ModuleRoHSMG1250H-XN2MMFeatures High level of integration Free wheeling diodes with fast and soft reverse IGBT3 CHIP(Trench+Field recoveryStop technology) Solderable pins for PCB Low saturation voltage mountingand positive temperature coefficient Temperature sense included Fast switching and short tail curren
Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT45F122 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: BRGH25N120D | BRGH15N120D | BRGB6N65DP | BRG60N60D | BRG10N120D | TT100N120PF1E | TT075U065FQB | TT075U065FBC | TT075N120EBC | TT075N065EQ | TT060U065FQ