MG1250S-BA1MM IGBT. Datasheet pdf. Equivalent
Type Designator: MG1250S-BA1MM
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 500 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 80 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 7 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 60 nS
Coesⓘ - Output Capacitance, typ: 300 pF
Qgⓘ - Total Gate Charge, typ: 611 nC
Package: MODULE
MG1250S-BA1MM Transistor Equivalent Substitute - IGBT Cross-Reference Search
MG1250S-BA1MM Datasheet (PDF)
mg1250s-ba1mm.pdf
Power Module1200V 50A IGBT ModuleRoHSMG1250S-BA1MM Features Ultra Low Loss Positive Temperature Coefficient High Ruggedness With Fast Free-Wheeling High Short Circuit DiodesCapabilityApplications Inverter SMPS and UPS Converter Induction Heating WelderAgency ApprovalsAGENCY AGENCY FILE NUMBERE71639Module Characteristics
mg1250w-xbn2mm.pdf
Power ModulePower Module1200V 50A IGBT ModuleRoHSMG1250W-XBN2MM Features High level of Free wheeling diodes integrationonly one with fast and soft reverse power semiconductor recoverymodule required for the Industry standard whole drive package with insulated Low saturation voltage copper base plate and and positive temperature soldering pins for PC
mg1250h-xn2mm.pdf
Power Module1200V 50A IGBT ModuleRoHSMG1250H-XN2MMFeatures High level of integration Free wheeling diodes with fast and soft reverse IGBT3 CHIP(Trench+Field recoveryStop technology) Solderable pins for PCB Low saturation voltage mountingand positive temperature coefficient Temperature sense included Fast switching and short tail curren
Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , GT30F126 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .
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