IRG4PH40UD Todos los transistores

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IRG4PH40UD - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRG4PH40UD

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 160W

Tensión colector-emisor (Vce): 1200V

Voltaje de saturación colector-emisor (Vce sat):

Tensión emisor-compuerta (Veg):

Corriente del colector DC máxima (Ic): 15A

Temperatura operativa máxima (Tj), °C: 175

Tiempo de elevación:

Capacitancia de salida (Cc), pF:

Empaquetado / Estuche: TO247AC

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IRG4PH40UD Datasheet (PDF)

1.1. irg4ph40ud.pdf Size:220K _international_rectifier

IRG4PH40UD
IRG4PH40UD

PD- 91621B IRG4PH40UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features UltraFast: Optimized for high operating VCES = 1200V frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode VCE(on) typ. = 2.43V New IGBT design provides tighter G parameter distribution and higher e

1.2. irg4ph40u.pdf Size:163K _international_rectifier

IRG4PH40UD
IRG4PH40UD

D I ? I T I T D T I T I T Features C Features Features Features Features UltraFast: Optimized for high operating VCES = 1200V frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode New IGBT design provides tighter VCE(on) typ. = 2.43V G parameter distribution and higher efficiency than previous generations

1.3. irg4ph40ud.pdf Size:339K _igbt_a

IRG4PH40UD
IRG4PH40UD

PD- 91621C IRG4PH40UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • UltraFast: Optimized for high operating VCES = 1200V frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode VCE(on) typ. = 2.43V • New IGBT design provides tighter G parameter distribution and higher efficiency than previous generat

1.4. irg4ph40u.pdf Size:166K _igbt_a

IRG4PH40UD
IRG4PH40UD

 D I ا I T I T D T I T I T Features C Features Features Features Features • UltraFast: Optimized for high operating VCES = 1200V frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter VCE(on) typ. = 2.43V G parameter distribution and higher efficiency than previous gene

1.5. irg4ph40ud2-e.pdf Size:299K _igbt_a

IRG4PH40UD
IRG4PH40UD

PD - 96781A IRG4PH40UD2-E UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • UltraFast IGBT optimized for high operating VCES = 1200V frequencies up to 200kHz in resonant mode • IGBT co-packaged with HEXFREDTM ultrafast VCE(on) typ. = 2.43V ultra-soft-recovery anti-parallel diode for use in G resonant circuits • Indus

Otros transistores... IRG4PF50WD , IRG4PH20K , IRG4PH20KD , IRG4PH30K , IRG4PH30KD , IRG4PH40K , IRG4PH40KD , IRG4PH40U , IRGB14C40L , IRG4PH50K , IRG4PH50KD , IRG4PH50S , IRG4PH50U , IRG4PH50UD , IRG4PSC71K , IRG4PSC71KD , IRG4PSC71U .

 


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Introduzca al menos 1 números o letras