IRG4PH40UD - Аналоги. Основные параметры
Наименование: IRG4PH40UD
Тип транзистора: IGBT
Тип управляющего канала: N
Pc ⓘ - Максимальная рассеиваемая мощность: 160 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic| ⓘ - Максимальный постоянный ток коллектора: 41 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2.43 V @25℃
Tj ⓘ - Максимальная температура перехода: 150 ℃
tr ⓘ - Время нарастания типовое: 35 nS
Coesⓘ - Выходная емкость, типовая: 120 pF
Тип корпуса: TO247AC
Аналог (замена) для IRG4PH40UD
Технические параметры IRG4PH40UD
irg4ph40ud.pdf
PD- 91621C IRG4PH40UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features UltraFast Optimized for high operating VCES = 1200V frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode VCE(on) typ. = 2.43V New IGBT design provides tighter G parameter distribution and higher efficiency than previous generat
irg4ph40ud2-e.pdf
PD - 96781A IRG4PH40UD2-E UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features UltraFast IGBT optimized for high operating VCES = 1200V frequencies up to 200kHz in resonant mode IGBT co-packaged with HEXFREDTM ultrafast VCE(on) typ. = 2.43V ultra-soft-recovery anti-parallel diode for use in G resonant circuits Indus
irg4ph40u.pdf
D I I T I T D T I T I T Features C Features Features Features Features UltraFast Optimized for high operating VCES = 1200V frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode New IGBT design provides tighter VCE(on) typ. = 2.43V G parameter distribution and higher efficiency than previous gene
irg4ph40kd.pdf
PD- 91577B IRG4PH40KD Short Circuit Rated INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast IGBT ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features High short circuit rating optimized for motor control, VCES = 1200V tsc =10 s, VCC = 720V , TJ = 125 C, VGE = 15V VCE(on) typ. = 2.74V Combines low conduction losses with high G switching speed
Другие IGBT... IRG4PF50WD , IRG4PH20K , IRG4PH20KD , IRG4PH30K , IRG4PH30KD , IRG4PH40K , IRG4PH40KD , IRG4PH40U , IRG7R313U , IRG4PH50K , IRG4PH50KD , IRG4PH50S , IRG4PH50U , IRG4PH50UD , IRG4PSC71K , IRG4PSC71KD , IRG4PSC71U .
Список транзисторов
Обновления
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
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