MG150J7KS60 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MG150J7KS60
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 750 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 150 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.6 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
Paquete / Cubierta: MODULE
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MG150J7KS60 Datasheet (PDF)
mg150j7ks60.pdf

MG150J7KS60 TOSHIBA GTR Module Silicon N Channel IGBT MG150J7KS60 (600V/150A 7in1) High Power Switching Applications Motor Control Applications Integrates inverter and brake power circuit into a single package The electrodes are isolated from case. Low thermal resistance VCE (sat) = 1.6 V (typ.) Equivalent Circuit P143 7 11154 8 12UB VW16 17
mg150j2ys50.pdf

MG150J2YS50 TOSHIBA GTR Module Silicon N Channel IGBT MG150J2YS50 Unit: mmHigh Power Switching Applications Motor Control Applications The electrodes are isolated from case High input impedance Includes a complete half bridge in one package Enhancement-mode High speed : t = 0.30s (Max) (I = 150A) f Ct = 0.15s (Max) (I = 150A) rr F Low saturation volta
mmg150j120uz6tn.pdf

MMG150J120UZ6TN1200V 150A IGBT ModuleFebruary 2017 Version 1 RoHS CompliantPRODUCT FEATURES IGBT3 Chip(Trench+Field Stop technology) Low switching losses VCE(sat) with positive temperature coefficient Fast switching and short tail current Popular SOT-227 PackageAPPLICATIONS AC motor control Motion/servo control Inverter and power suppliesIGBTA
Otros transistores... MG1250S-BA1MM , MG1250W-XBN2MM , MG1275H-XN2MM , MG1275S-BA1MM , MG1275W-XBN2MM , MG1275W-XN2MM , MG150J1BS11 , MG150J2YS50 , CRG60T60AN3H , MG150Q2YS40 , MG150Q2YS50 , MG150Q2YS51 , MG150Q2YS65H , MG15J6ES40 , MG15Q6ES42 , MG15Q6ES50A , MG15Q6ES51 .



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