MG150J7KS60 Datasheet and Replacement
Type Designator: MG150J7KS60
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 750 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 150 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
Package: MODULE
MG150J7KS60 Datasheet (PDF)
mg150j7ks60.pdf

MG150J7KS60 TOSHIBA GTR Module Silicon N Channel IGBT MG150J7KS60 (600V/150A 7in1) High Power Switching Applications Motor Control Applications Integrates inverter and brake power circuit into a single package The electrodes are isolated from case. Low thermal resistance VCE (sat) = 1.6 V (typ.) Equivalent Circuit P143 7 11154 8 12UB VW16 17
mg150j2ys50.pdf

MG150J2YS50 TOSHIBA GTR Module Silicon N Channel IGBT MG150J2YS50 Unit: mmHigh Power Switching Applications Motor Control Applications The electrodes are isolated from case High input impedance Includes a complete half bridge in one package Enhancement-mode High speed : t = 0.30s (Max) (I = 150A) f Ct = 0.15s (Max) (I = 150A) rr F Low saturation volta
mmg150j120uz6tn.pdf

MMG150J120UZ6TN1200V 150A IGBT ModuleFebruary 2017 Version 1 RoHS CompliantPRODUCT FEATURES IGBT3 Chip(Trench+Field Stop technology) Low switching losses VCE(sat) with positive temperature coefficient Fast switching and short tail current Popular SOT-227 PackageAPPLICATIONS AC motor control Motion/servo control Inverter and power suppliesIGBTA
Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , IHW20N135R5 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .
History: TGAN40N135FD | FD800R33KL2C-K_B5 | MMG200D060B6N
Keywords - MG150J7KS60 transistor datasheet
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History: TGAN40N135FD | FD800R33KL2C-K_B5 | MMG200D060B6N



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