MG150Q2YS51 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MG150Q2YS51
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Máxima potencia disipada (Pc), W: 1250
Tensión máxima colector-emisor |Vce|, V: 1200
Tensión máxima puerta-emisor |Vge|, V: 20
Colector de Corriente Continua a 25℃ |Ic|, A: 200
Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 2.8
Temperatura máxima de unión (Tj), ℃: 150
Tiempo de subida (tr), typ, nS: 50
Paquete / Cubierta: MODULE
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MG150Q2YS51 Datasheet (PDF)
mg150q2ys51.pdf
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MG150Q2YS51 TOSHIBA GTR Module Silicon N Channel IGBT MG150Q2YS51 High Power Switching Applications Unit: mmMotor Control Applications High input impedance High speed : t = 0.3s (Max) f@Inductive Load Low saturation voltage : V = 3.6V (Max) CE (sat) Enhancement-mode Includes a complete half bridge in one package. The electrodes are isolated from case.
mg150q2ys50.pdf
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MG150Q2YS50 TOSHIBA GTR Module Silicon N Channel IGBT MG150Q2YS50 High Power Switching Applications Unit: mmMotor Control Applications High input impedance High speed : t = 0.3s (Max) f@Inductive load Low saturation voltage : V = 3.6V (Max) CE (sat) Enhancement-mode Includes a complete half bridge in one package. The electrodes are isolated from case.
mg150q2ys65h.pdf
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MG150Q2YS65H TOSHIBA IGBT Module Silicon N Channel IGBT MG150Q2YS65H High Power & High Speed Switching Unit: mmApplications High input impedance Enhancement-mode The electrodes are isolated from case. Equivalent Circuit E1 E2 C1 E2JEDEC G1 E1/C2 G2 JEITA TOSHIBA 2-95A4A Weight: 255 g (typ.) Maximum Ratings (Ta == 25C) ==Characteri
Otros transistores... MG1275S-BA1MM , MG1275W-XBN2MM , MG1275W-XN2MM , MG150J1BS11 , MG150J2YS50 , MG150J7KS60 , MG150Q2YS40 , MG150Q2YS50 , NGD8201N , MG150Q2YS65H , MG15J6ES40 , MG15Q6ES42 , MG15Q6ES50A , MG15Q6ES51 , MG17100D-BN4MM , MG17100S-BN4MM , MG17150D-BN4MM .
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