MG150Q2YS51 - аналоги, параметры транзистора - Справочник транзисторов

MG150Q2YS51 даташит

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MG150Q2YS51 TOSHIBA GTR Module Silicon N Channel IGBT MG150Q2YS51 High Power Switching Applications Unit mm Motor Control Applications High input impedance High speed t = 0.3 s (Max) f @Inductive Load Low saturation voltage V = 3.6V (Max) CE (sat) Enhancement-mode Includes a complete half bridge in one package. The electrodes are isolated from case.

4.1. Size:260K toshiba
mg150q2ys50.pdf pdf_icon

MG150Q2YS50 TOSHIBA GTR Module Silicon N Channel IGBT MG150Q2YS50 High Power Switching Applications Unit mm Motor Control Applications High input impedance High speed t = 0.3 s (Max) f @Inductive load Low saturation voltage V = 3.6V (Max) CE (sat) Enhancement-mode Includes a complete half bridge in one package. The electrodes are isolated from case.

5.1. Size:117K toshiba
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5.2. Size:161K toshiba
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MG150Q2YS65H TOSHIBA IGBT Module Silicon N Channel IGBT MG150Q2YS65H High Power & High Speed Switching Unit mm Applications High input impedance Enhancement-mode The electrodes are isolated from case. Equivalent Circuit E1 E2 C1 E2 JEDEC G1 E1/C2 G2 JEITA TOSHIBA 2-95A4A Weight 255 g (typ.) Maximum Ratings (Ta = = 25 C) = = Characteri

Другие IGBT... MG1275S-BA1MM , MG1275W-XBN2MM , MG1275W-XN2MM , MG150J1BS11 , MG150J2YS50 , MG150J7KS60 , MG150Q2YS40 , MG150Q2YS50 , YGW60N65F1A1 , MG150Q2YS65H , MG15J6ES40 , MG15Q6ES42 , MG15Q6ES50A , MG15Q6ES51 , MG17100D-BN4MM , MG17100S-BN4MM , MG17150D-BN4MM .