MG150Q2YS65H - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

MG150Q2YS65H TOSHIBA IGBT Module Silicon N Channel IGBT MG150Q2YS65H High Power & High Speed Switching Unit: mmApplications High input impedance Enhancement-mode The electrodes are isolated from case. Equivalent Circuit E1 E2 C1 E2JEDEC G1 E1/C2 G2 JEITA TOSHIBA 2-95A4A Weight: 255 g (typ.) Maximum Ratings (Ta == 25C) ==Characteri

MG150Q2YS50 TOSHIBA GTR Module Silicon N Channel IGBT MG150Q2YS50 High Power Switching Applications Unit: mmMotor Control Applications High input impedance High speed : t = 0.3s (Max) f@Inductive load Low saturation voltage : V = 3.6V (Max) CE (sat) Enhancement-mode Includes a complete half bridge in one package. The electrodes are isolated from case.

MG150Q2YS51 TOSHIBA GTR Module Silicon N Channel IGBT MG150Q2YS51 High Power Switching Applications Unit: mmMotor Control Applications High input impedance High speed : t = 0.3s (Max) f@Inductive Load Low saturation voltage : V = 3.6V (Max) CE (sat) Enhancement-mode Includes a complete half bridge in one package. The electrodes are isolated from case.