MG150Q2YS65H IGBT. Datasheet pdf. Equivalent
Type Designator: MG150Q2YS65H
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 890 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 150 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 50 nS
Package: MODULE
MG150Q2YS65H Transistor Equivalent Substitute - IGBT Cross-Reference Search
MG150Q2YS65H Datasheet (PDF)
mg150q2ys65h.pdf
MG150Q2YS65H TOSHIBA IGBT Module Silicon N Channel IGBT MG150Q2YS65H High Power & High Speed Switching Unit: mmApplications High input impedance Enhancement-mode The electrodes are isolated from case. Equivalent Circuit E1 E2 C1 E2JEDEC G1 E1/C2 G2 JEITA TOSHIBA 2-95A4A Weight: 255 g (typ.) Maximum Ratings (Ta == 25C) ==Characteri
mg150q2ys50.pdf
MG150Q2YS50 TOSHIBA GTR Module Silicon N Channel IGBT MG150Q2YS50 High Power Switching Applications Unit: mmMotor Control Applications High input impedance High speed : t = 0.3s (Max) f@Inductive load Low saturation voltage : V = 3.6V (Max) CE (sat) Enhancement-mode Includes a complete half bridge in one package. The electrodes are isolated from case.
mg150q2ys51.pdf
MG150Q2YS51 TOSHIBA GTR Module Silicon N Channel IGBT MG150Q2YS51 High Power Switching Applications Unit: mmMotor Control Applications High input impedance High speed : t = 0.3s (Max) f@Inductive Load Low saturation voltage : V = 3.6V (Max) CE (sat) Enhancement-mode Includes a complete half bridge in one package. The electrodes are isolated from case.
Datasheet: MG1275W-XBN2MM , MG1275W-XN2MM , MG150J1BS11 , MG150J2YS50 , MG150J7KS60 , MG150Q2YS40 , MG150Q2YS50 , MG150Q2YS51 , GT30F131 , MG15J6ES40 , MG15Q6ES42 , MG15Q6ES50A , MG15Q6ES51 , MG17100D-BN4MM , MG17100S-BN4MM , MG17150D-BN4MM , MG17200D-BN4MM .
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