MG150Q2YS65H Specs and Replacement
Type Designator: MG150Q2YS65H
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 890 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 150 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3 V @25℃
Package: MODULE MG150Q2YS65H Substitution - IGBTⓘ Cross-Reference Search
MG150Q2YS65H datasheet
mg150q2ys65h.pdf
MG150Q2YS65H TOSHIBA IGBT Module Silicon N Channel IGBT MG150Q2YS65H High Power & High Speed Switching Unit mm Applications High input impedance Enhancement-mode The electrodes are isolated from case. Equivalent Circuit E1 E2 C1 E2 JEDEC G1 E1/C2 G2 JEITA TOSHIBA 2-95A4A Weight 255 g (typ.) Maximum Ratings (Ta = = 25 C) = = Characteri... See More ⇒
mg150q2ys50.pdf
MG150Q2YS50 TOSHIBA GTR Module Silicon N Channel IGBT MG150Q2YS50 High Power Switching Applications Unit mm Motor Control Applications High input impedance High speed t = 0.3 s (Max) f @Inductive load Low saturation voltage V = 3.6V (Max) CE (sat) Enhancement-mode Includes a complete half bridge in one package. The electrodes are isolated from case. ... See More ⇒
mg150q2ys51.pdf
MG150Q2YS51 TOSHIBA GTR Module Silicon N Channel IGBT MG150Q2YS51 High Power Switching Applications Unit mm Motor Control Applications High input impedance High speed t = 0.3 s (Max) f @Inductive Load Low saturation voltage V = 3.6V (Max) CE (sat) Enhancement-mode Includes a complete half bridge in one package. The electrodes are isolated from case.... See More ⇒
Specs: MG1275W-XBN2MM, MG1275W-XN2MM, MG150J1BS11, MG150J2YS50, MG150J7KS60, MG150Q2YS40, MG150Q2YS50, MG150Q2YS51, CRG60T60AK3HD, MG15J6ES40, MG15Q6ES42, MG15Q6ES50A, MG15Q6ES51, MG17100D-BN4MM, MG17100S-BN4MM, MG17150D-BN4MM, MG17200D-BN4MM
Keywords - MG150Q2YS65H transistor spec
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