MG200Q1US41 Todos los transistores

 

MG200Q1US41 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MG200Q1US41
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 1400 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 200 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 3 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 300 nS
   Paquete / Cubierta: MODULE
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MG200Q1US41 Datasheet (PDF)

 ..1. Size:253K  toshiba
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MG200Q1US41

 5.1. Size:120K  toshiba
mg200q1us51.pdf pdf_icon

MG200Q1US41

 7.1. Size:411K  macmic
mmg200q120b6hn.pdf pdf_icon

MG200Q1US41

MMG200Q120B6HN1200V 200A IGBT ModuleApril 2015 Version 01 RoHS CompliantPRODUCT FEATURES High short circuit capability,self limiting short circuit current IGBT CHIP(T4 Fast Trench+Field Stop technology) VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching lo

 7.2. Size:295K  macmic
mmg200q120b6tc.pdf pdf_icon

MG200Q1US41

MMG200Q120B6TC1200V 200A IGBT ModuleSeptember 2020 Version 01 RoHS CompliantPRODUCT FEATURES IGBT CHIP(Trench+Field Stop technology) VCE(sat) with positive temperature coefficient High short circuit capability Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching lossesAPPLICATIONS High frequency s

Otros transistores... MG17300D-BN4MM , MG17300WB-BN4MM , MG17450WB-BN4MM , MG1750S-BN4MM , MG1775S-BN4MM , MG200J2YS50 , MG200J6ES60 , MG200J6ES61 , TGPF30N43P , MG200Q1US51 , MG200Q2YS40 , MG200Q2YS50 , MG200Q2YS65H , MG25J6ES40 , MG25N2YS1 , MG25Q1BS11 , MG25Q2YS40 .

History: ISL9V2040S3S | DF160R12W2H3_B11 | APT45GP120B2DF2 | MMG75S120B6C | BSM400GA120DLC | MG100Q2YS50

 

 
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