MG200Q1US41 PDF and Equivalents Search

 

MG200Q1US41 Specs and Replacement

Type Designator: MG200Q1US41

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 1400 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 200 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3 V @25℃

tr ⓘ - Rise Time, typ: 300 nS

Package: MODULE

 MG200Q1US41 Substitution

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MG200Q1US41 datasheet

 ..1. Size:253K  toshiba
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MG200Q1US41

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MG200Q1US41

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 7.1. Size:411K  macmic
mmg200q120b6hn.pdf pdf_icon

MG200Q1US41

MMG200Q120B6HN 1200V 200A IGBT Module April 2015 Version 01 RoHS Compliant PRODUCT FEATURES High short circuit capability,self limiting short circuit current IGBT CHIP(T4 Fast Trench+Field Stop technology) VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching lo... See More ⇒

 7.2. Size:295K  macmic
mmg200q120b6tc.pdf pdf_icon

MG200Q1US41

MMG200Q120B6TC 1200V 200A IGBT Module September 2020 Version 01 RoHS Compliant PRODUCT FEATURES IGBT CHIP(Trench+Field Stop technology) VCE(sat) with positive temperature coefficient High short circuit capability Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching losses APPLICATIONS High frequency s... See More ⇒

Specs: MG17300D-BN4MM, MG17300WB-BN4MM, MG17450WB-BN4MM, MG1750S-BN4MM, MG1775S-BN4MM, MG200J2YS50, MG200J6ES60, MG200J6ES61, CRG75T60AK3HD, MG200Q1US51, MG200Q2YS40, MG200Q2YS50, MG200Q2YS65H, MG25J6ES40, MG25N2YS1, MG25Q1BS11, MG25Q2YS40

Keywords - MG200Q1US41 transistor spec

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