All IGBT. MG200Q1US41 Datasheet

 

MG200Q1US41 Datasheet and Replacement


   Type Designator: MG200Q1US41
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 1400 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 200 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 300 nS
   Package: MODULE
      - IGBT Cross-Reference

 

MG200Q1US41 Datasheet (PDF)

 ..1. Size:253K  toshiba
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MG200Q1US41

 5.1. Size:120K  toshiba
mg200q1us51.pdf pdf_icon

MG200Q1US41

 7.1. Size:411K  macmic
mmg200q120b6hn.pdf pdf_icon

MG200Q1US41

MMG200Q120B6HN1200V 200A IGBT ModuleApril 2015 Version 01 RoHS CompliantPRODUCT FEATURES High short circuit capability,self limiting short circuit current IGBT CHIP(T4 Fast Trench+Field Stop technology) VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching lo

 7.2. Size:295K  macmic
mmg200q120b6tc.pdf pdf_icon

MG200Q1US41

MMG200Q120B6TC1200V 200A IGBT ModuleSeptember 2020 Version 01 RoHS CompliantPRODUCT FEATURES IGBT CHIP(Trench+Field Stop technology) VCE(sat) with positive temperature coefficient High short circuit capability Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching lossesAPPLICATIONS High frequency s

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: RCF1565SL1 | RJH30H1DPP-M0 | MMG25H120X6TN | 2MBI900VXA-120P-50 | BT15T60A8F | AOKS40B65H1 | IQGB300N120I4

Keywords - MG200Q1US41 transistor datasheet

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 MG200Q1US41 equivalent finder
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