MG200Q1US41 Specs and Replacement
Type Designator: MG200Q1US41
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 1400 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 200 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3 V @25℃
Package: MODULE MG200Q1US41 Substitution - IGBT ⓘ Cross-Reference Search
MG200Q1US41 datasheet
mmg200q120b6hn.pdf
MMG200Q120B6HN 1200V 200A IGBT Module April 2015 Version 01 RoHS Compliant PRODUCT FEATURES High short circuit capability,self limiting short circuit current IGBT CHIP(T4 Fast Trench+Field Stop technology) VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching lo... See More ⇒
mmg200q120b6tc.pdf
MMG200Q120B6TC 1200V 200A IGBT Module September 2020 Version 01 RoHS Compliant PRODUCT FEATURES IGBT CHIP(Trench+Field Stop technology) VCE(sat) with positive temperature coefficient High short circuit capability Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching losses APPLICATIONS High frequency s... See More ⇒
Specs: MG17300D-BN4MM, MG17300WB-BN4MM, MG17450WB-BN4MM, MG1750S-BN4MM, MG1775S-BN4MM, MG200J2YS50, MG200J6ES60, MG200J6ES61, CRG75T60AK3HD, MG200Q1US51, MG200Q2YS40, MG200Q2YS50, MG200Q2YS65H, MG25J6ES40, MG25N2YS1, MG25Q1BS11, MG25Q2YS40
Keywords - MG200Q1US41 transistor spec
MG200Q1US41 cross reference
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MG200Q1US41 lookup
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE
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