MG200Q2YS65H IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MG200Q2YS65H
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 1310 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 200 A
Tjⓘ -
Temperatura máxima de unión: 150 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ -
Voltaje de saturación colector-emisor, typ: 3 V @25℃
trⓘ - Tiempo de subida, typ: 50 nS
Encapsulados: MODULE
Búsqueda de reemplazo de MG200Q2YS65H IGBT
- Selección ⓘ de transistores por parámetros
MG200Q2YS65H datasheet
..1. Size:156K toshiba
mg200q2ys65h.pdf 

MG200Q2YS65H TOSHIBA IGBT Module Silicon N Channel IGBT MG200Q2YS65H High Power & High Speed Switching Unit mm Applications High input impedance Enhancement-mode The electrodes are isolated from case. Equivalent Circuit E1 E2 C1 E2 JEDEC G1 E1/C2 G2 JEITA TOSHIBA 2-109C4A Weight 430 g (typ.) Maximum Ratings (Tc = = 25 C) = = Character
8.3. Size:238K macmic
mmg200q060b6r.pdf 

MMG200Q060B6R 600V 200A IGBT Module July 2013 PRELIMINARY RoHS Compliant FEATURES High short circuit capability,self limiting short circuit current VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching losses APPLICATIONS GQ Series Module High frequ
8.4. Size:411K macmic
mmg200q120b6hn.pdf 

MMG200Q120B6HN 1200V 200A IGBT Module April 2015 Version 01 RoHS Compliant PRODUCT FEATURES High short circuit capability,self limiting short circuit current IGBT CHIP(T4 Fast Trench+Field Stop technology) VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching lo
8.5. Size:295K macmic
mmg200q120b6tc.pdf 

MMG200Q120B6TC 1200V 200A IGBT Module September 2020 Version 01 RoHS Compliant PRODUCT FEATURES IGBT CHIP(Trench+Field Stop technology) VCE(sat) with positive temperature coefficient High short circuit capability Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching losses APPLICATIONS High frequency s
8.6. Size:407K macmic
mmg200q120b6tn.pdf 

MMG200Q120B6TN 1200V 200A IGBT Module April 2015 Version 01 RoHS Compliant PRODUCT FEATURES IGBT3 CHIP(Trench+Field Stop technology) High short circuit capability,self limiting short circuit current VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching losses A
8.7. Size:372K macmic
mmg200q120b.pdf 

MMG200Q120B 1200V 200A IGBT Module February 2011 PRELIMINARY RoHS Compliant FEATURES Ultra Low Loss High Ruggedness High Short Circuit Capability VCE(sat) With Positive Temperature Coefficient With Fast Free-Wheeling Diodes APPLICATIONS Inverter Convertor GQ Series Module Welder SMPS and UPS Induction Heating ABSOLUTE MAXIM
8.8. Size:337K macmic
mmg200q120ua6tc.pdf 

MMG200Q120UA6TC 1200V 200A IGBT Module September 2020 Version 01 RoHS Compliant PRODUCT FEATURES IGBT CHIP(Trench+Field Stop technology) VCE(sat) with positive temperature coefficient High short circuit capability Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching losses APPLICATIONS High frequency
Otros transistores... MG1775S-BN4MM
, MG200J2YS50
, MG200J6ES60
, MG200J6ES61
, MG200Q1US41
, MG200Q1US51
, MG200Q2YS40
, MG200Q2YS50
, TGAN20N135FD
, MG25J6ES40
, MG25N2YS1
, MG25Q1BS11
, MG25Q2YS40
, MG25Q6ES42
, MG25Q6ES50A
, MG25Q6ES51
, MG300J2YS40
.
History: FGH75T65SHDTLN4
| IXSX50N60BD1