MG200Q2YS65H PDF and Equivalents Search

 

MG200Q2YS65H Specs and Replacement

Type Designator: MG200Q2YS65H

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 1310 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 200 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3 V @25℃

tr ⓘ - Rise Time, typ: 50 nS

Package: MODULE

 MG200Q2YS65H Substitution

- IGBT ⓘ Cross-Reference Search

 

MG200Q2YS65H datasheet

 ..1. Size:156K  toshiba
mg200q2ys65h.pdf pdf_icon

MG200Q2YS65H

MG200Q2YS65H TOSHIBA IGBT Module Silicon N Channel IGBT MG200Q2YS65H High Power & High Speed Switching Unit mm Applications High input impedance Enhancement-mode The electrodes are isolated from case. Equivalent Circuit E1 E2 C1 E2 JEDEC G1 E1/C2 G2 JEITA TOSHIBA 2-109C4A Weight 430 g (typ.) Maximum Ratings (Tc = = 25 C) = = Character... See More ⇒

 5.1. Size:112K  toshiba
mg200q2ys40.pdf pdf_icon

MG200Q2YS65H

... See More ⇒

 5.2. Size:337K  toshiba
mg200q2ys50.pdf pdf_icon

MG200Q2YS65H

... See More ⇒

 8.1. Size:120K  toshiba
mg200q1us51.pdf pdf_icon

MG200Q2YS65H

... See More ⇒

Specs: MG1775S-BN4MM, MG200J2YS50, MG200J6ES60, MG200J6ES61, MG200Q1US41, MG200Q1US51, MG200Q2YS40, MG200Q2YS50, TGAN20N135FD, MG25J6ES40, MG25N2YS1, MG25Q1BS11, MG25Q2YS40, MG25Q6ES42, MG25Q6ES50A, MG25Q6ES51, MG300J2YS40

Keywords - MG200Q2YS65H transistor spec

 MG200Q2YS65H cross reference
 MG200Q2YS65H equivalent finder
 MG200Q2YS65H lookup
 MG200Q2YS65H substitution
 MG200Q2YS65H replacement

 

 

 


🌐 : EN  ES  РУ

social

LIST

Last Update

IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE

 

 

 

Popular searches

hy1906 | 2sc2238 | 2sc458 transistor | b649a transistor | 2sa606 | 2n3644 | 2sc2240bl | 2sc1913

 

 

↑ Back to Top
.