All IGBT. MG200Q2YS65H Datasheet

 

MG200Q2YS65H Datasheet and Replacement


   Type Designator: MG200Q2YS65H
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 1310 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 200 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 50 nS
   Package: MODULE
 

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MG200Q2YS65H Datasheet (PDF)

 ..1. Size:156K  toshiba
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MG200Q2YS65H

MG200Q2YS65H TOSHIBA IGBT Module Silicon N Channel IGBT MG200Q2YS65H High Power & High Speed Switching Unit: mmApplications High input impedance Enhancement-mode The electrodes are isolated from case. Equivalent Circuit E1 E2 C1 E2JEDEC G1 E1/C2 G2 JEITA TOSHIBA 2-109C4A Weight: 430 g (typ.) Maximum Ratings (Tc == 25C) ==Character

 5.1. Size:112K  toshiba
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MG200Q2YS65H

 5.2. Size:337K  toshiba
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MG200Q2YS65H

 8.1. Size:120K  toshiba
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MG200Q2YS65H

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: STGWA60H65DFB | IXGN50N60BD3 | AOTF15B60D | MMG600WB170B | IRGP35B60PDPBF | BSM150GAL120DN2 | 2MBI100S-120

Keywords - MG200Q2YS65H transistor datasheet

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