MG50Q1BS11 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

MG50Q1BS11 datasheet

..1. Size:105K toshiba
mg50q1bs11.pdf pdf_icon

9.1. Size:89K toshiba
mg50q2ys50.pdf pdf_icon

MG50Q2YS50 TOSHIBA GTR Module Silicon N Channel IGBT MG50Q2YS50 High Power Switching Applications Unit mm Motor Control Applications High input impedance High speed t = 0.3 s (Max) f @Inductive load Low saturation voltage V = 3.6V (Max) CE (sat) Enhancement-mode Includes a complete half bridge in one package. The electrodes are isolated from case.

9.2. Size:262K toshiba
mg50q6es40.pdf pdf_icon

9.3. Size:179K toshiba
mg50q2ys40.pdf pdf_icon

MG50Q2YS40 TOSHIBA GTR Module Silicon N Channel IGBT MG50Q2YS40 High Power Switching Applications. Unit in mm Motor Control Applications. High input impedance High speed tf = 0.5 s (max.) trr = 0.5 s (max.) Low saturation voltage V = 4.0V (max.) CE(sat) Enhancement-mode Includes a complete half bridge in one package. The electrodes are isola