MG50Q1BS11 Specs and Replacement
Type Designator: MG50Q1BS11
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 300 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 50 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.3 V @25℃
Package: MODULE MG50Q1BS11 Substitution - IGBTⓘ Cross-Reference Search
MG50Q1BS11 datasheet
mg50q2ys50.pdf
MG50Q2YS50 TOSHIBA GTR Module Silicon N Channel IGBT MG50Q2YS50 High Power Switching Applications Unit mm Motor Control Applications High input impedance High speed t = 0.3 s (Max) f @Inductive load Low saturation voltage V = 3.6V (Max) CE (sat) Enhancement-mode Includes a complete half bridge in one package. The electrodes are isolated from case. ... See More ⇒
mg50q2ys40.pdf
MG50Q2YS40 TOSHIBA GTR Module Silicon N Channel IGBT MG50Q2YS40 High Power Switching Applications. Unit in mm Motor Control Applications. High input impedance High speed tf = 0.5 s (max.) trr = 0.5 s (max.) Low saturation voltage V = 4.0V (max.) CE(sat) Enhancement-mode Includes a complete half bridge in one package. The electrodes are isola... See More ⇒
Specs: MG300J2YS50, MG300N1US1, MG300Q1US11, MG300Q2YS40, MG300Q2YS50, MG50J1BS11, MG50J2YS50, MG50J6ES50, CRG75T65AK5HD, MG50Q2YS40, MG50Q2YS50, MG50Q6ES40, MG50Q6ES50A, MG600Q1US51, MG75J1BS11, MG75J1ZS40, MG75J1ZS50
Keywords - MG50Q1BS11 transistor spec
MG50Q1BS11 cross reference
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