All IGBT. MG50Q1BS11 Datasheet

 

MG50Q1BS11 Datasheet and Replacement


   Type Designator: MG50Q1BS11
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 300 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 50 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.3 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 300 nS
   Package: MODULE
 

 MG50Q1BS11 substitution

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MG50Q1BS11 Datasheet (PDF)

 ..1. Size:105K  toshiba
 mg50q1bs11.pdf pdf_icon

MG50Q1BS11

 9.1. Size:89K  toshiba
 mg50q2ys50.pdf pdf_icon

MG50Q1BS11

MG50Q2YS50 TOSHIBA GTR Module Silicon N Channel IGBT MG50Q2YS50 High Power Switching Applications Unit: mmMotor Control Applications High input impedance High speed : t = 0.3s (Max) f @Inductive load Low saturation voltage : V = 3.6V (Max) CE (sat) Enhancement-mode Includes a complete half bridge in one package. The electrodes are isolated from case.

 9.2. Size:262K  toshiba
 mg50q6es40.pdf pdf_icon

MG50Q1BS11

 9.3. Size:179K  toshiba
 mg50q2ys40.pdf pdf_icon

MG50Q1BS11

MG50Q2YS40 TOSHIBA GTR Module Silicon N Channel IGBT MG50Q2YS40 High Power Switching Applications. Unit in mmMotor Control Applications. High input impedance High speed: tf = 0.5s (max.) trr = 0.5s (max.) Low saturation voltage : V = 4.0V (max.) CE(sat) Enhancement-mode Includes a complete half bridge in one package. The electrodes are isola

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Datasheet: MG300J2YS50 , MG300N1US1 , MG300Q1US11 , MG300Q2YS40 , MG300Q2YS50 , MG50J1BS11 , MG50J2YS50 , MG50J6ES50 , XNF15N60T , MG50Q2YS40 , MG50Q2YS50 , MG50Q6ES40 , MG50Q6ES50A , MG600Q1US51 , MG75J1BS11 , MG75J1ZS40 , MG75J1ZS50 .

History: RJH3044 | IRGB4059DPBF

Keywords - MG50Q1BS11 transistor datasheet

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