MG50Q2YS40 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: MG50Q2YS40
   Tipo de transistor: IGBT + Diode + Built-in Zener Diodes
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

   Pcⓘ - Máxima potencia disipada: 400 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 50 A
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   Paquete / Cubierta: MODULE

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MG50Q2YS40 Datasheet (PDF)

..1. Size:179K toshiba
mg50q2ys40.pdf

MG50Q2YS40 TOSHIBA GTR Module Silicon N Channel IGBT MG50Q2YS40 High Power Switching Applications. Unit in mmMotor Control Applications. High input impedance High speed: tf = 0.5s (max.) trr = 0.5s (max.) Low saturation voltage : V = 4.0V (max.) CE(sat) Enhancement-mode Includes a complete half bridge in one package. The electrodes are isola

6.1. Size:89K toshiba
mg50q2ys50.pdf

MG50Q2YS50 TOSHIBA GTR Module Silicon N Channel IGBT MG50Q2YS50 High Power Switching Applications Unit: mmMotor Control Applications High input impedance High speed : t = 0.3s (Max) f @Inductive load Low saturation voltage : V = 3.6V (Max) CE (sat) Enhancement-mode Includes a complete half bridge in one package. The electrodes are isolated from case.

9.1. Size:262K toshiba
mg50q6es40.pdf