MG50Q2YS40 Todos los transistores

 

MG50Q2YS40 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MG50Q2YS40
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 400 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 50 A
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   Paquete / Cubierta: MODULE
     - Selección de transistores por parámetros

 

MG50Q2YS40 Datasheet (PDF)

 ..1. Size:179K  toshiba
 mg50q2ys40.pdf pdf_icon

MG50Q2YS40

MG50Q2YS40 TOSHIBA GTR Module Silicon N Channel IGBT MG50Q2YS40 High Power Switching Applications. Unit in mmMotor Control Applications. High input impedance High speed: tf = 0.5s (max.) trr = 0.5s (max.) Low saturation voltage : V = 4.0V (max.) CE(sat) Enhancement-mode Includes a complete half bridge in one package. The electrodes are isola

 6.1. Size:89K  toshiba
 mg50q2ys50.pdf pdf_icon

MG50Q2YS40

MG50Q2YS50 TOSHIBA GTR Module Silicon N Channel IGBT MG50Q2YS50 High Power Switching Applications Unit: mmMotor Control Applications High input impedance High speed : t = 0.3s (Max) f @Inductive load Low saturation voltage : V = 3.6V (Max) CE (sat) Enhancement-mode Includes a complete half bridge in one package. The electrodes are isolated from case.

 9.1. Size:262K  toshiba
 mg50q6es40.pdf pdf_icon

MG50Q2YS40

 9.2. Size:105K  toshiba
 mg50q1bs11.pdf pdf_icon

MG50Q2YS40

MOSTRAR MÁS

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History: APTGT100X120TE3 | BLG60T65FUL-F | SKM100GAL12T4 | FF100R12RT4 | APTGT100DA120D1 | F4-100R12KS4 | GT50J301

 

 
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