MG50Q2YS40 IGBT. Datasheet pdf. Equivalent

   Type Designator: MG50Q2YS40
   Type: IGBT + Anti-Parallel Diode + Built-in Zener Diodes
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 400 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 50 A @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   Package: MODULE

MG50Q2YS40 Transistor Equivalent Substitute - IGBT Cross-Reference Search

MG50Q2YS40 Datasheet (PDF)

..1. Size:179K toshiba
mg50q2ys40.pdf

MG50Q2YS40 TOSHIBA GTR Module Silicon N Channel IGBT MG50Q2YS40 High Power Switching Applications. Unit in mmMotor Control Applications. High input impedance High speed: tf = 0.5s (max.) trr = 0.5s (max.) Low saturation voltage : V = 4.0V (max.) CE(sat) Enhancement-mode Includes a complete half bridge in one package. The electrodes are isola

6.1. Size:89K toshiba
mg50q2ys50.pdf

MG50Q2YS50 TOSHIBA GTR Module Silicon N Channel IGBT MG50Q2YS50 High Power Switching Applications Unit: mmMotor Control Applications High input impedance High speed : t = 0.3s (Max) f @Inductive load Low saturation voltage : V = 3.6V (Max) CE (sat) Enhancement-mode Includes a complete half bridge in one package. The electrodes are isolated from case.

9.1. Size:262K toshiba
mg50q6es40.pdf