MG50Q2YS40 PDF and Equivalents Search

 

MG50Q2YS40 Specs and Replacement

Type Designator: MG50Q2YS40

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 400 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 50 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

Package: MODULE

 MG50Q2YS40 Substitution

- IGBTⓘ Cross-Reference Search

 

MG50Q2YS40 datasheet

 ..1. Size:179K  toshiba
 mg50q2ys40.pdf pdf_icon

MG50Q2YS40

MG50Q2YS40 TOSHIBA GTR Module Silicon N Channel IGBT MG50Q2YS40 High Power Switching Applications. Unit in mm Motor Control Applications. High input impedance High speed tf = 0.5 s (max.) trr = 0.5 s (max.) Low saturation voltage V = 4.0V (max.) CE(sat) Enhancement-mode Includes a complete half bridge in one package. The electrodes are isola... See More ⇒

 6.1. Size:89K  toshiba
 mg50q2ys50.pdf pdf_icon

MG50Q2YS40

MG50Q2YS50 TOSHIBA GTR Module Silicon N Channel IGBT MG50Q2YS50 High Power Switching Applications Unit mm Motor Control Applications High input impedance High speed t = 0.3 s (Max) f @Inductive load Low saturation voltage V = 3.6V (Max) CE (sat) Enhancement-mode Includes a complete half bridge in one package. The electrodes are isolated from case. ... See More ⇒

 9.1. Size:262K  toshiba
 mg50q6es40.pdf pdf_icon

MG50Q2YS40

... See More ⇒

 9.2. Size:105K  toshiba
 mg50q1bs11.pdf pdf_icon

MG50Q2YS40

... See More ⇒

SHOW MORE

Specs: MG300N1US1, MG300Q1US11, MG300Q2YS40, MG300Q2YS50, MG50J1BS11, MG50J2YS50, MG50J6ES50, MG50Q1BS11, TGD30N40P, MG50Q2YS50, MG50Q6ES40, MG50Q6ES50A, MG600Q1US51, MG75J1BS11, MG75J1ZS40, MG75J1ZS50, MG75J2YS50

Keywords - MG50Q2YS40 transistor spec

 MG50Q2YS40 cross reference
 MG50Q2YS40 equivalent finder
 MG50Q2YS40 lookup
 MG50Q2YS40 substitution
 MG50Q2YS40 replacement

 

 

 

 

↑ Back to Top
.