2PG402 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2PG402
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 10 W
|Vce|ⓘ - Tensión máxima colector-emisor: 400 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 8 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 5 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2(max) V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 130 nS
Coesⓘ - Capacitancia de salida, typ: 1400 pF
Paquete / Cubierta: DPAK
- Selección de transistores por parámetros
2PG402 Datasheet (PDF)
2pg402.pdf

IGBTs2PG402Insulated Gate Bipolar Transistor Featuresunit: mm High breakdown voltage: VCES = 400V6.5 0.1 Allowing to control large current: IC(peak) = 130A5.3 0.14.35 0.1 Housed in the surface mounting package3.0 0.1 Applications For flash-light for use in a camera Absolute Maximum Ratings (TC = 25C)1.0 0.10.85 0.1 0.75 0.1 0.5 0.14.6 0.1 0.
2pg401.pdf

IGBTs2PG401Insulated Gate Bipolar Transistor Featuresunit: mm High breakdown voltage: VCES = 400V Allowing to control large current: IC(peak) = 130A7.00.3 3.50.2 Allowing to provide with the surface mounting package3.00.2 Applications For flash-light for use in a camera1.10.1 0.850.10.750.1 0.40.1 Absolute Maximum Ratings (TC = 25C)2.30.2Paramet
Otros transistores... HCKW75N65BH2 , HCKW75N65FH2 , 2N6975 , 2N6976 , 2N6977 , 2N6978 , 2PG352 , 2PG401 , IKW50N60T , 2SH11 , 2SH12 , 2SH13 , 2SH14 , 2SH15 , 2SH16 , 2SH17 , 2SH18 .
History: 2PG009 | APT20GF120KR | KWMFP40R12NS3 | AFGHL40T65SPD | IXGC16N60C2 | MM50G3U120BMX | IXYH24N90C3D1
History: 2PG009 | APT20GF120KR | KWMFP40R12NS3 | AFGHL40T65SPD | IXGC16N60C2 | MM50G3U120BMX | IXYH24N90C3D1



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