IRG4PSC71KD Todos los transistores

PD - 91684A IRG4PSC71KD PRELIMINARY Short Circuit Rated INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast IGBT ULTRAFAST SOFT RECOVERY DIODE C Features Hole-less clip/pressure mount package compatible VCES = 600V with TO-247 and TO-264, with reinforced pins High abort circuit rating IGBTs, optimized for VCE(on) typ. = 1.83V motorcontrol G Minimum switching losses comb

PD- 95901 IRG4PSC71KDPbF Lead-Free www.irf.com 1 09/15/04 IRG4PSC71KDPbF 2 www.irf.com IRG4PSC71KDPbF www.irf.com 3 IRG4PSC71KDPbF 4 www.irf.com IRG4PSC71KDPbF www.irf.com 5 IRG4PSC71KDPbF 6 www.irf.com IRG4PSC71KDPbF www.irf.com 7 IRG4PSC71KDPbF 8 www.irf.com IRG4PSC71KDPbF www.irf.com 9 IRG4PSC71KDPbF Case Outline and Dimensions Super-247 Super-247 (TO-

PD - 91683B IRG4PSC71K Short Circuit Rated INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT C Features VCES = 600V Hole-less clip/pressure mount package compatible with TO-247 and TO-264, with reinforced pins VCE(on) typ. = 1.83V High abort circuit rating IGBTs, optimized for G motorcontrol Minimum switching losses combined with low @VGE = 15V, IC = 60A E conduction

PD - 91681A IRG4PSC71U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C UltraFast switching speed optimized for operating VCES = 600V frequencies 8 to 40kHz in hard switching, 200kHz in resonant mode soft switching Generation 4 IGBT design provides tighter VCE(on) typ. = 1.67V G parameter distribution and higher efficiency (minimum switching and conduct

PD - 91682A IRG4PSC71UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Generation 4 IGBT design provides tighter VCES = 600V parameter distribution and higher efficiency (minimum switching and conduction losses) than VCE(on) typ. = 1.67V prior generations G IGBT co-packaged with HEXFRED ultrafast, ultrasoft recov