IRG4PSC71KD
- IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRG4PSC71KD
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 350
W
|Vce|ⓘ - Tensión máxima colector-emisor: 600
V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20
V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 85
A
|VCEsat|ⓘ -
Voltaje de saturación colector-emisor, typ: 1.83
V @25℃
|VGEth|ⓘ -
Tensión máxima de puerta-umbral: 6
V
Tjⓘ -
Temperatura máxima de unión: 150
℃
trⓘ - Tiempo de subida, typ: 107
nS
Coesⓘ - Capacitancia de salida, typ: 730
pF
Qgⓘ - Carga total de la puerta, typ: 340
nC
Paquete / Cubierta:
SUPER247
Búsqueda de reemplazo de IRG4PSC71KD
- IGBT
IRG4PSC71KD
Datasheet (PDF)
..1. Size:191K international rectifier
irg4psc71kd.pdf
PD - 91684AIRG4PSC71KDPRELIMINARY Short Circuit RatedINSULATED GATE BIPOLAR TRANSISTOR WITHUltraFast IGBTULTRAFAST SOFT RECOVERY DIODECFeatures Hole-less clip/pressure mount package compatible VCES = 600Vwith TO-247 and TO-264, with reinforced pins High abort circuit rating IGBTs, optimized forVCE(on) typ. = 1.83VmotorcontrolG Minimum switching losses comb
0.1. Size:446K infineon
irg4psc71kdpbf.pdf
PD- 95901IRG4PSC71KDPbF Lead-Freewww.irf.com 109/15/04IRG4PSC71KDPbF2 www.irf.comIRG4PSC71KDPbFwww.irf.com 3IRG4PSC71KDPbF4 www.irf.comIRG4PSC71KDPbFwww.irf.com 5IRG4PSC71KDPbF6 www.irf.comIRG4PSC71KDPbFwww.irf.com 7IRG4PSC71KDPbF8 www.irf.comIRG4PSC71KDPbFwww.irf.com 9IRG4PSC71KDPbFCase Outline and Dimensions Super-247Super-247 (TO-
4.1. Size:280K international rectifier
irg4psc71k.pdf
PD - 91683BIRG4PSC71KShort Circuit RatedINSULATED GATE BIPOLAR TRANSISTORUltraFast IGBTCFeaturesVCES = 600V Hole-less clip/pressure mount package compatiblewith TO-247 and TO-264, with reinforced pinsVCE(on) typ. = 1.83V High abort circuit rating IGBTs, optimized forGmotorcontrol Minimum switching losses combined with low@VGE = 15V, IC = 60AEconduction
5.1. Size:141K international rectifier
irg4psc71u.pdf
PD - 91681AIRG4PSC71UUltraFast Speed IGBTINSULATED GATE BIPOLAR TRANSISTORFeatures C UltraFast switching speed optimized for operatingVCES = 600V frequencies 8 to 40kHz in hard switching, 200kHz in resonant mode soft switching Generation 4 IGBT design provides tighterVCE(on) typ. = 1.67VG parameter distribution and higher efficiency (minimum switching and conduct
5.2. Size:248K international rectifier
irg4psc71ud.pdf
PD - 91682AIRG4PSC71UD UltraFast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeatures Generation 4 IGBT design provides tighterVCES = 600V parameter distribution and higher efficiency (minimum switching and conduction losses) thanVCE(on) typ. = 1.67V prior generationsG IGBT co-packaged with HEXFRED ultrafast, ultrasoft recov
Otros transistores... IRG4PH40U
, IRG4PH40UD
, IRG4PH50K
, IRG4PH50KD
, IRG4PH50S
, IRG4PH50U
, IRG4PH50UD
, IRG4PSC71K
, RJH3047
, IRG4PSC71U
, IRG4PSC71UD
, IRG4PSH71K
, IRG4PSH71KD
, IRG4RC10K
, IRG4RC10KD
, IRG4RC10S
, IRG4RC10SD
.