MIXA225RF1200TSF Todos los transistores

 

MIXA225RF1200TSF - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MIXA225RF1200TSF
   Tipo de transistor: IGBT + Diode
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 1100 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 360 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.8 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.5 V
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 70 nS
   Qgⓘ - Carga total de la puerta, typ: 690 nC
   Paquete / Cubierta: MODULE
     - Selección de transistores por parámetros

 

MIXA225RF1200TSF Datasheet (PDF)

 0.1. Size:207K  ixys
mixa225rf1200tsf.pdf pdf_icon

MIXA225RF1200TSF

MIXA225RF1200TSFtentativeVCES = 1200 VXPT IGBT ModuleIC25 = 360 AVCE(sat) = 1.8 VBoost chopper + free wheeling Diodes + NTCPart numberMIXA225RF1200TSF52 1 8 9T43DBoostD10/116Features / Advantages: Applications: Package: SimBus F High level of integration - only one Brake for AC motor drives Industry standard outlinepower semiconductor module r

 7.1. Size:173K  ixys
mixa225pf1200tsf.pdf pdf_icon

MIXA225RF1200TSF

MIXA225PF1200TSFpreliminaryVCES = 2x 1200VXPT IGBT ModuleI= 360AC25VCE(sat) = 1.8VPhase leg + free wheeling Diodes + NTCPart numberMIXA225PF1200TSFBackside: isolated52 1 8 7 94310/116Features / Advantages: Applications: Package: SimBus F High level of integration - only one AC motor drives Isolation Voltage: V~3000 power semiconductor module re

 9.1. Size:234K  ixys
mixa20w1200mc.pdf pdf_icon

MIXA225RF1200TSF

MIXA20W1200MCSix-Pack VCES = 1200 VIC25 = 28 AXPT IGBTVCE(sat) = 2.1 VPart name (Marking on product)MIXA20W1200MCO9P9L9 S18 W18A5 E5 I14G14 K14C5A1 E1 K10C1G10H10Features: Application: Package: Easy paralleling due to the positive AC motor drives "ECO-PAC2" standard package temperature coefficient of the on-state Solar inverter Easy to mo

 9.2. Size:271K  ixys
mixa20wb1200tmi.pdf pdf_icon

MIXA225RF1200TSF

MIXA20WB1200TMItentative3~ Brake 3~XPT IGBT ModuleRectifier Chopper InverterVRRM = 1600 V VCES = 1200 V VCES = 1200 VIDAV = 70 A IC25 = 28 A IC25 = 28 AIFSM = 270 A VCE(sat)= 1.8 V VCE(sat) = 1.8 V6-Pack + 3~ Rectifier Bridge & Brake Unit + NTCPart numberMIXA20WB1200TMIBackside: isolatedP P1G1 G3 G5T1L1B UL2 V WL3T2GB G2 G4 G6N NB EU EV EWFeatures / A

Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: IRG4MC40U | MMG150CE065PD6TC

 

 
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