MP6753 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MP6753
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 60 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 20 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.3 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 300 nS
Paquete / Cubierta: MODULE
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MP6753 Datasheet (PDF)
mp6753.pdf
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mp6750.pdf
MP6750 TOSHIBA GTR Module Silicon N Channel IGBT MP6750 High Power Switching Applications Unit: mmMotor Control Applications The electrodes are isolated from case. 6 IGBTs are built into 1 package. Enhancement-mode Low saturation voltage : VCE (sat) = 4.0V (Max) (IC = 15A) High speed : t = 0.35s (Max) (I = 15A) f C t = 0.15s (Max) (I = 15A) rr F JEDE
mp6752.pdf
MP6752 TOSHIBA GTR Module Silicon N Channel IGBT MP6752 High Power Switching Applications Unit in mmMotor Control Applications The electrodes are isolated from case. 6 IGBTs are built into 1 package. Enhancement-mode Low saturation voltage : VCE(sat) = 4.0V (max.) (IC = 20A) High speed: t = 0.35s (max.) (I = 20A) f Ct = 0.15s (max.) (I = 20A) r
Otros transistores... MIXD50W650TED , MIXD600PF650TSF , MIXD80PM650TMI , MIXG120W1200TEH , MIXG180W1200TEH , MIXG240W1200TEH , MP6750 , MP6752 , MBQ50T65FDSC , MP6757 , MSAGA11F120D , MUBW30-12A6 , NXH80T120L2Q0 , NXH80T120L2Q0PG , PDMB200E6 , PM100CBS060 , PM15CMA060 .
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