IRG4RC10KD
- IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRG4RC10KD
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 38
W
|Vce|ⓘ - Tensión máxima colector-emisor: 600
V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20
V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 9
A
|VCEsat|ⓘ -
Voltaje de saturación colector-emisor, typ: 2.39
V @25℃
|VGEth|ⓘ -
Tensión máxima de puerta-umbral: 6.5
V
Tjⓘ -
Temperatura máxima de unión: 150
℃
trⓘ - Tiempo de subida, typ: 28
nS
Coesⓘ - Capacitancia de salida, typ: 29
pF
Qgⓘ - Carga total de la puerta, typ: 19
nC
Paquete / Cubierta:
D-PAK
Búsqueda de reemplazo de IRG4RC10KD
- IGBT
IRG4RC10KD
Datasheet (PDF)
..1. Size:193K international rectifier
irg4rc10kd.pdf 
PD 91736AIRG4RC10KDINSULATED GATE BIPOLAR TRANSISTOR WITH Short Circuit RatedULTRAFAST SOFT RECOVERY DIODEUltraFast IGBTCFeatures Short Circuit Rated UltraFast: Optimized forVCES = 600V high operating frequencies >5.0 kHz , and Short Circuit Rated to 10s @ 125C, VGE = 15VVCE(on) typ. = 2.39V Generation 4 IGBT design provides tighterG parameter distributio
5.1. Size:138K international rectifier
irg4rc10k.pdf
PD 91735AIRG4RC10KShort Circuit RatedINSULATED GATE BIPOLAR TRANSISTORUltraFast IGBTFeaturesC Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit VCES = 600V Rated to 10s @ 125C, VGE = 15V Generation 4 IGBT design provides higher efficiencyVCE(on) typ. = 2.39VG than Generation 3 Industry standard TO-252AA
6.1. Size:724K international rectifier
irg4rc10s.pdf
PD- 91732BIRG4RC10Swww.irf.com 107/04/07IRG4RC10S1.82 www.irf.comIRG4RC10Swww.irf.com 3IRG4RC10S4 www.irf.comIRG4RC10Swww.irf.com 5IRG4RC10S6 www.irf.comIRG4RC10Swww.irf.com 7IRG4RC10SD-Pak (TO-252AA) Package OutlineDimensions are shown in millimeters (inches)D-Pak (TO-252AA) Part Marking InformationNote: For the most current drawing please refer
6.2. Size:726K international rectifier
irg4rc10sd.pdf
PD-91678BIRG4RC10SD Standard Speed CoPackINSULATED GATE BIPOLAR TRANSISTOR WITHIGBTULTRAFAST SOFT RECOVERY DIODECFeatures Extremely low voltage drop 1.1V(typ) @ 2AVCES = 600V S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4VCE(on) typ. = 1.10V KHz in brushless DC drives.G Tight parameter distribution IGBT
6.3. Size:194K international rectifier
irg4rc10ud.pdf
PD 91571AI UltraFast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODEFeatures CFeaturesFeaturesFeaturesFeatures UltraFast: Optimized for medium operating VCES = 600V frequencies ( 8-40 kHz in hard switching, >200 kHz in resonant mode).VCE(on) typ. = 2.15V Generation 4 IGBT design provides tighter parameter distribution a
6.4. Size:136K international rectifier
irg4rc10u.pdf
PD - 91572AIRG4RC10UUltraFast Speed IGBTINSULATED GATE BIPOLAR TRANSISTORFeatures CFeaturesFeaturesFeaturesFeatures UltraFast: Optimized for high operatingVCES = 600V frequencies ( 8-40 kHz in hard switching, >200 kHz in resonant mode) Generation 4 IGBT design provides tighterVCE(on) typ. = 2.15VG parameter distribution and higher efficiency than previous
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