IRG4RC10KD Todos los transistores

PD 91736A IRG4RC10KD INSULATED GATE BIPOLAR TRANSISTOR WITH Short Circuit Rated ULTRAFAST SOFT RECOVERY DIODE UltraFast IGBT C Features Short Circuit Rated UltraFast Optimized for VCES = 600V high operating frequencies >5.0 kHz , and Short Circuit Rated to 10 s @ 125 C, VGE = 15V VCE(on) typ. = 2.39V Generation 4 IGBT design provides tighter G parameter distributio

PD 91735A IRG4RC10K Short Circuit Rated INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features C Short Circuit Rated UltraFast Optimized for high operating frequencies >5.0 kHz , and Short Circuit VCES = 600V Rated to 10 s @ 125 C, VGE = 15V Generation 4 IGBT design provides higher efficiency VCE(on) typ. = 2.39V G than Generation 3 Industry standard TO-252AA

PD- 91732B IRG4RC10S www.irf.com 1 07/04/07 IRG4RC10S 1.8 2 www.irf.com IRG4RC10S www.irf.com 3 IRG4RC10S 4 www.irf.com IRG4RC10S www.irf.com 5 IRG4RC10S 6 www.irf.com IRG4RC10S www.irf.com 7 IRG4RC10S D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) D-Pak (TO-252AA) Part Marking Information Note For the most current drawing please refer

PD-91678B IRG4RC10SD Standard Speed CoPack INSULATED GATE BIPOLAR TRANSISTOR WITH IGBT ULTRAFAST SOFT RECOVERY DIODE C Features Extremely low voltage drop 1.1V(typ) @ 2A VCES = 600V S-Series Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4 VCE(on) typ. = 1.10V KHz in brushless DC drives. G Tight parameter distribution IGBT

PD 91571A I UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C Features Features Features Features UltraFast Optimized for medium operating VCES = 600V frequencies ( 8-40 kHz in hard switching, >200 kHz in resonant mode). VCE(on) typ. = 2.15V Generation 4 IGBT design provides tighter parameter distribution a

PD - 91572A IRG4RC10U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Features Features Features Features UltraFast Optimized for high operating VCES = 600V frequencies ( 8-40 kHz in hard switching, >200 kHz in resonant mode) Generation 4 IGBT design provides tighter VCE(on) typ. = 2.15V G parameter distribution and higher efficiency than previous