GT50N324 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: GT50N324

Código: 50N324

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 150

Tensión colector-emisor (Vce): 1000

Voltaje de saturación colector-emisor (Vce sat): 1.9

Tensión emisor-compuerta (Veg): 25

Corriente del colector DC máxima (Ic): 50

Temperatura operativa máxima (Tj), °C: 150

Tiempo de elevación: 230

Capacitancia de salida (Cc), pF:

Empaquetado / Estuche: TO3P

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GT50N324 Datasheet (PDF)

0.1. gt50n324.pdf Size:310K _1

GT50N324 NIGBT GT50N324 : mm 6 FRD IGBT: tf = 0.11 s () IC = 60 A

7.1. gt50n322a.pdf Size:144K _toshiba

GT50N322A TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50N322A Voltage Resonance Inverter Switching Application Unit: mmFifth Generation IGBT FRD included between emitter and collector Enhancement mode type High speed IGBT : tf = 0.10 s (typ.) (IC = 60 A) FRD : trr = 0.8 s (typ.) (di/dt = -20 A/s) Low saturation voltage: VCE (sat)

 9.1. ixgt50n60c2.pdf Size:584K _ixys

Advance Technical DataVCES = 600 VIXGH 50N60C2HiPerFASTTM IGBTIC25 = 75 AC2-Class High Speed IGBTs IXGT 50N60C2VCE(sat) = 2.7 Vtfi typ = 48 nsSymbol Test Conditions Maximum Ratings TO-247 AD (IXGH)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VC (TAB)VGES Continuous 20 VGCVGEM Transient 30 VETO-268IC25 TC = 25C (limited by

9.2. ixgh50n90b2 ixgt50n90b2.pdf Size:162K _ixys

Advance Technical InformationVCES = 900 VIXGH 50N90B2HiPerFASTTM IGBTIC25 = 75 AB2-Class High Speed IGBTs IXGT 50N90B2VCE(sat) = 2.7 Vtfi typ = 200 nsSymbol Test Conditions Maximum Ratings TO-247 (IXGH)VCES TJ = 25C to 150C 900 VVCGR TJ = 25C to 150C; RGE = 1 M 900 VC (TAB)VGES Continuous 20 VGCVGEM Transient 30 VETO-268IC25 TC = 25C (limit

 9.3. ixgt50n90b2.pdf Size:158K _ixys

Advance Technical InformationVCES = 900 VIXGH 50N90B2HiPerFASTTM IGBTIC25 = 75 AB2-Class High Speed IGBTs IXGT 50N90B2VCE(sat) = 2.7 Vtfi typ = 200 nsSymbol Test Conditions Maximum Ratings TO-247 (IXGH)VCES TJ = 25C to 150C 900 VVCGR TJ = 25C to 150C; RGE = 1 M 900 VC (TAB)VGES Continuous 20 VGCVGEM Transient 30 VETO-268IC25 TC = 25C (limit

9.4. ixgh50n60b2 ixgt50n60b2.pdf Size:585K _ixys

VCES = 600 VIXGH 50N60B2HiPerFASTTM IGBTIC25 = 75 AB2-Class High Speed IGBTs IXGT 50N60B2VCE(sat) = 2.0 Vtfi typ = 65 nsSymbol Test Conditions Maximum Ratings TO-247 (IXGH)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VC (TAB)VGES Continuous 20 VGCVGEM Transient 30 VETO-268IC25 TC = 25C (limited by leads) 75 A (IXGT)IC11

 9.5. ixgh50n60c2 ixgt50n60c2.pdf Size:586K _ixys

Advance Technical DataVCES = 600 VIXGH 50N60C2HiPerFASTTM IGBTIC25 = 75 AC2-Class High Speed IGBTs IXGT 50N60C2VCE(sat) = 2.7 Vtfi typ = 48 nsSymbol Test Conditions Maximum Ratings TO-247 AD (IXGH)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VC (TAB)VGES Continuous 20 VGCVGEM Transient 30 VETO-268IC25 TC = 25C (limited by

9.6. ixgt50n60b2.pdf Size:583K _ixys

VCES = 600 VIXGH 50N60B2HiPerFASTTM IGBTIC25 = 75 AB2-Class High Speed IGBTs IXGT 50N60B2VCE(sat) = 2.0 Vtfi typ = 65 nsSymbol Test Conditions Maximum Ratings TO-247 (IXGH)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VC (TAB)VGES Continuous 20 VGCVGEM Transient 30 VETO-268IC25 TC = 25C (limited by leads) 75 A (IXGT)IC11

9.7. kgt50n60kda.pdf Size:567K _kec

SEMICONDUCTORKGT50N60KDATECHNICAL DATAGeneral DescriptionBKEC NPT Trench IGBTs offer low switching losses, high energy efficiency AOS Kand short circuit ruggedness.It is designed for applications such as motor control, uninterrupted powersupplies(UPS), general inverters.DIM MILLIMETERS_+A 15.90 0.30_B5.00 + 0.20_C20.85 + 0.30FEATURES _D 3.00 + 0.20

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