GT50N324 Todos los transistores

 

GT50N324 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: GT50N324
   Tipo de transistor: IGBT + Diode
   Código de marcado: 50N324
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 150 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1000 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 25 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 50 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.9 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 230 nS
   Paquete / Cubierta: TO3P
     - Selección de transistores por parámetros

 

GT50N324 Datasheet (PDF)

 ..1. Size:310K  1
 gt50n324.pdf pdf_icon

GT50N324

GT50N324 NIGBT GT50N324 : mm 6 FRD IGBT: tf = 0.11 s () IC = 60 A

 7.1. Size:144K  toshiba
 gt50n322a.pdf pdf_icon

GT50N324

GT50N322A TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50N322A Voltage Resonance Inverter Switching Application Unit: mmFifth Generation IGBT FRD included between emitter and collector Enhancement mode type High speed IGBT : tf = 0.10 s (typ.) (IC = 60 A) FRD : trr = 0.8 s (typ.) (di/dt = -20 A/s) Low saturation voltage: VCE (sat)

 9.1. Size:901K  rohm
 rgt50ns65d.pdf pdf_icon

GT50N324

RGT50NS65D 650V 25A Field Stop Trench IGBT Data SheetlOutline LPDS / TO-262VCES650V(2) IC(100C)25AVCE(sat) (Typ.)1.65V(1) (3) PD194W(1)(2)(3) lFeatures lInner Circuit1) Low Collector - Emitter Saturation Voltage(2) (1) Gate 2) Low Switching Loss(2) Collector *1 3) Short Circuit Withstand Time 5s(3) Emitter (1) 4) Built in Very Fast & Soft

 9.2. Size:1207K  rohm
 rgt50nl65d.pdf pdf_icon

GT50N324

RGT50NL65D650V 25A Field Stop Trench IGBT DatasheetOutline LPDL (TO-263L)VCES650V(2)IC(100C)25AVCE(sat) (Typ.)1.65V(1)(3)PD194WFeatures Inner Circuit1) Low Collector - Emitter Saturation Voltage(2)(1) Gate2) Low Switching Loss(2) Collector*13) Short Circuit Withstand Time 5s(3) Emitter(1)4) Built in Very Fast & Soft Recovery FRD*1

MOSTRAR MÁS

Otros transistores... IXBH9N160 , IXBT15N170 , FGH40T65SHDF_F155 , FGPF30N45TTU , IGF40T120F , MBQ40T65FDSC , 2PG011 , BT60N60ANF , GT30F132 , MGD622 , FGA40N65SMD , FGL40N120AND , MM10G3T120B , MM120G3T65BM , MM15G3T120B , MM20G3R135B , MM20G3T135B .

History: MGD622 | IRG7I313U | IRGP4066D-E | BT15N120ANF | IRGPS40B120UD | SGB15N60HS | SRE80N065FSU2

 

 
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