GT50N324 - Даташиты. Аналоги. Основные параметры
Наименование: GT50N324
Тип транзистора: IGBT
Тип управляющего канала: N
Pc ⓘ -
Максимальная рассеиваемая мощность: 150
W
|Vce|ⓘ -
Предельно-допустимое напряжение коллектор-эмиттер: 1000
V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 25
V
|Ic| ⓘ - Максимальный постоянный ток коллектора:
50
A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое:
1.9
V @25℃
Tj ⓘ - Максимальная температура перехода:
150
℃
tr ⓘ -
Время нарастания типовое: 230
nS
Тип корпуса:
TO3P
Аналог (замена) для GT50N324
GT50N324 Datasheet (PDF)
..1. Size:310K 1
gt50n324.pdf 

GT50N324 N IGBT GT50N324 mm 6 FRD IGBT tf = 0.11 s ( ) IC = 60 A
7.1. Size:144K toshiba
gt50n322a.pdf 

GT50N322A TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50N322A Voltage Resonance Inverter Switching Application Unit mm Fifth Generation IGBT FRD included between emitter and collector Enhancement mode type High speed IGBT tf = 0.10 s (typ.) (IC = 60 A) FRD trr = 0.8 s (typ.) (di/dt = -20 A/ s) Low saturation voltage VCE (sat)
9.1. Size:901K rohm
rgt50ns65d.pdf 

RGT50NS65D 650V 25A Field Stop Trench IGBT Data Sheet lOutline LPDS / TO-262 VCES 650V (2) IC(100 C) 25A VCE(sat) (Typ.) 1.65V (1) (3) PD 194W (1)(2)(3) lFeatures lInner Circuit 1) Low Collector - Emitter Saturation Voltage (2) (1) Gate 2) Low Switching Loss (2) Collector *1 3) Short Circuit Withstand Time 5 s (3) Emitter (1) 4) Built in Very Fast & Soft
9.2. Size:1207K rohm
rgt50nl65d.pdf 

RGT50NL65D 650V 25A Field Stop Trench IGBT Datasheet Outline LPDL (TO-263L) VCES 650V (2) IC(100 C) 25A VCE(sat) (Typ.) 1.65V (1) (3) PD 194W Features Inner Circuit 1) Low Collector - Emitter Saturation Voltage (2) (1) Gate 2) Low Switching Loss (2) Collector *1 3) Short Circuit Withstand Time 5 s (3) Emitter (1) 4) Built in Very Fast & Soft Recovery FRD *1
9.3. Size:583K ixys
ixgt50n60b2.pdf 

VCES = 600 V IXGH 50N60B2 HiPerFASTTM IGBT IC25 = 75 A B2-Class High Speed IGBTs IXGT 50N60B2 VCE(sat) = 2.0 V tfi typ = 65 ns Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V C (TAB) VGES Continuous 20 V G C VGEM Transient 30 V E TO-268 IC25 TC = 25 C (limited by leads) 75 A (IXGT) IC11
9.4. Size:162K ixys
ixgh50n90b2 ixgt50n90b2.pdf 

Advance Technical Information VCES = 900 V IXGH 50N90B2 HiPerFASTTM IGBT IC25 = 75 A B2-Class High Speed IGBTs IXGT 50N90B2 VCE(sat) = 2.7 V tfi typ = 200 ns Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TJ = 25 C to 150 C 900 V VCGR TJ = 25 C to 150 C; RGE = 1 M 900 V C (TAB) VGES Continuous 20 V G C VGEM Transient 30 V E TO-268 IC25 TC = 25 C (limit
9.5. Size:585K ixys
ixgh50n60b2 ixgt50n60b2.pdf 

VCES = 600 V IXGH 50N60B2 HiPerFASTTM IGBT IC25 = 75 A B2-Class High Speed IGBTs IXGT 50N60B2 VCE(sat) = 2.0 V tfi typ = 65 ns Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V C (TAB) VGES Continuous 20 V G C VGEM Transient 30 V E TO-268 IC25 TC = 25 C (limited by leads) 75 A (IXGT) IC11
9.6. Size:181K ixys
ixgk50n60b ixgt50n60b ixgj50n60b.pdf 

IXGH 50N60B HiPerFASTTM IGBT VCES = 600 V IXGK 50N60B IC25 = 75 A IXGT 50N60B VCE(sat) = 2.3 V IXGJ 50N60B tfi(typ) = 120 ns TO-247 AD (IXGH) C C (TAB) Symbol Test Conditions Maximum Ratings E VCES TJ = 25 C to 150 C 600 V TO-268 (D3) ( IXGT) VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V G VGEM Transient 30 V C (TAB) E IC25 TC = 25 C75 A TO-268 Le
9.7. Size:586K ixys
ixgh50n60c2 ixgt50n60c2.pdf 

Advance Technical Data VCES = 600 V IXGH 50N60C2 HiPerFASTTM IGBT IC25 = 75 A C2-Class High Speed IGBTs IXGT 50N60C2 VCE(sat) = 2.7 V tfi typ = 48 ns Symbol Test Conditions Maximum Ratings TO-247 AD (IXGH) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V C (TAB) VGES Continuous 20 V G C VGEM Transient 30 V E TO-268 IC25 TC = 25 C (limited by
9.8. Size:158K ixys
ixgt50n90b2.pdf 

Advance Technical Information VCES = 900 V IXGH 50N90B2 HiPerFASTTM IGBT IC25 = 75 A B2-Class High Speed IGBTs IXGT 50N90B2 VCE(sat) = 2.7 V tfi typ = 200 ns Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TJ = 25 C to 150 C 900 V VCGR TJ = 25 C to 150 C; RGE = 1 M 900 V C (TAB) VGES Continuous 20 V G C VGEM Transient 30 V E TO-268 IC25 TC = 25 C (limit
9.9. Size:584K ixys
ixgt50n60c2.pdf 

Advance Technical Data VCES = 600 V IXGH 50N60C2 HiPerFASTTM IGBT IC25 = 75 A C2-Class High Speed IGBTs IXGT 50N60C2 VCE(sat) = 2.7 V tfi typ = 48 ns Symbol Test Conditions Maximum Ratings TO-247 AD (IXGH) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V C (TAB) VGES Continuous 20 V G C VGEM Transient 30 V E TO-268 IC25 TC = 25 C (limited by
9.10. Size:567K kec
kgt50n60kda.pdf 

SEMICONDUCTOR KGT50N60KDA TECHNICAL DATA General Description B KEC NPT Trench IGBTs offer low switching losses, high energy efficiency A O S K and short circuit ruggedness. It is designed for applications such as motor control, uninterrupted power supplies(UPS), general inverters. DIM MILLIMETERS _ + A 15.90 0.30 _ B 5.00 + 0.20 _ C 20.85 + 0.30 FEATURES _ D 3.00 + 0.20
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