MGD622 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MGD622
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 90
Tensión colector-emisor (Vce): 600
Voltaje de saturación colector-emisor (Vce sat): 2.1
Tensión emisor-compuerta (Veg): 30
Corriente del colector DC máxima (Ic): 40
Temperatura operativa máxima (Tj), °C: 150
Tiempo de elevación: 90
Capacitancia de salida (Cc), pF: 80
Empaquetado / Estuche: TO3P
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MGD622 Datasheet (PDF)
0.1. mgd622.pdf Size:458K _1
600 V, 20 A, IGBT with Fast Recovery Diode MGD622 Features Package Low Saturation Voltage TO3P-3L High Speed Switching With Integrated Low VF Fast Recovery Diode (4) RoHS Compliant C VCE ------------------------------------------------------ 600 V IC-------------------------------------------20 A (TC = 100 C) VCE(sat)--------------------------
9.1. mgd623n.pdf Size:231K _sanken-ele
IGBT MGD623N July, 2009 Features Package----TO-3P Low Saturation Voltage VCE(sat)=1.7V typ. High Speed tf=200ns typ. Low VF FRD Included VF=1.2V typ. Applications Current Resonance Inverter Switching Induction Heating Cooking Equivalent circuit C (2) G (1) E (3) Absolute maximum ratings (Ta=25C) Characteristic Symbol Rating Unit
9.2. mgd623s.pdf Size:228K _sanken-ele
IGBT MGD623S July, 2009 Features Package----TO-3P Low Saturation Voltage VCE(sat)=1.8V typ. High Speed tf=120ns typ. Low VF FRD Included VF=1.2V typ. Applications Current Resonance Inverter Switching Induction Heating Cooking Equivalent circuit C (2) G (1) E (3) Absolute maximum ratings (Ta=25C) Characteristic Symbol Rating Unit
Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , 1MBH50D-060 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .



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