MGD622 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MGD622
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Máxima potencia disipada (Pc), W: 90
Tensión máxima colector-emisor |Vce|, V: 600
Tensión máxima puerta-emisor |Vge|, V: 30
Colector de Corriente Continua a 25℃ |Ic|, A: 40
Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 2.1
Tensión máxima de puerta-umbral |VGE(th)|, V: 7
Temperatura máxima de unión (Tj), ℃: 150
Tiempo de subida (tr), typ, nS: 90
Capacitancia de salida (Cc), typ, pF: 80
Carga total de la puerta (Qg), typ, nC: 40
Paquete / Cubierta: TO3P
Búsqueda de reemplazo de MGD622 - IGBT
MGD622 Datasheet (PDF)
mgd622.pdf
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600 V, 20 A, IGBT with Fast Recovery Diode MGD622 Features Package Low Saturation Voltage TO3P-3L High Speed Switching With Integrated Low VF Fast Recovery Diode (4) RoHS Compliant C VCE ------------------------------------------------------ 600 V IC-------------------------------------------20 A (TC = 100 C) VCE(sat)--------------------------
mgd623n.pdf
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IGBT MGD623N July, 2009 Features Package----TO-3P Low Saturation Voltage VCE(sat)=1.7V typ. High Speed tf=200ns typ. Low VF FRD Included VF=1.2V typ. Applications Current Resonance Inverter Switching Induction Heating Cooking Equivalent circuit C (2) G (1) E (3) Absolute maximum ratings (Ta=25C) Characteristic Symbol Rating Unit
mgd623s.pdf
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IGBT MGD623S July, 2009 Features Package----TO-3P Low Saturation Voltage VCE(sat)=1.8V typ. High Speed tf=120ns typ. Low VF FRD Included VF=1.2V typ. Applications Current Resonance Inverter Switching Induction Heating Cooking Equivalent circuit C (2) G (1) E (3) Absolute maximum ratings (Ta=25C) Characteristic Symbol Rating Unit
Otros transistores... AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , SGT40N60FD2PN , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .
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