MGD622 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MGD622  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 90 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 30 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 40 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.1 V @25℃

trⓘ - Tiempo de subida, typ: 90 nS

Coesⓘ - Capacitancia de salida, typ: 80 pF

Encapsulados: TO3P

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MGD622 datasheet

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 mgd622.pdf pdf_icon

MGD622

600 V, 20 A, IGBT with Fast Recovery Diode MGD622 Features Package Low Saturation Voltage TO3P-3L High Speed Switching With Integrated Low VF Fast Recovery Diode (4) RoHS Compliant C VCE ------------------------------------------------------ 600 V IC-------------------------------------------20 A (TC = 100 C) VCE(sat)--------------------------

 9.1. Size:231K  sanken-ele
 mgd623n.pdf pdf_icon

MGD622

IGBT MGD623N July, 2009 Features Package----TO-3P Low Saturation Voltage VCE(sat)=1.7V typ. High Speed tf=200ns typ. Low VF FRD Included VF=1.2V typ. Applications Current Resonance Inverter Switching Induction Heating Cooking Equivalent circuit C (2) G (1) E (3) Absolute maximum ratings (Ta=25 C) Characteristic Symbol Rating Unit

 9.2. Size:228K  sanken-ele
 mgd623s.pdf pdf_icon

MGD622

IGBT MGD623S July, 2009 Features Package----TO-3P Low Saturation Voltage VCE(sat)=1.8V typ. High Speed tf=120ns typ. Low VF FRD Included VF=1.2V typ. Applications Current Resonance Inverter Switching Induction Heating Cooking Equivalent circuit C (2) G (1) E (3) Absolute maximum ratings (Ta=25 C) Characteristic Symbol Rating Unit

Otros transistores... IXBT15N170, FGH40T65SHDF_F155, FGPF30N45TTU, IGF40T120F, MBQ40T65FDSC, 2PG011, BT60N60ANF, GT50N324, YGF20N65T2, FGA40N65SMD, FGL40N120AND, MM10G3T120B, MM120G3T65BM, MM15G3T120B, MM20G3R135B, MM20G3T135B, MM25G3T120B