MM20G3R135B IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MM20G3R135B

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 333 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1350 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 40 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.6 V @25℃

trⓘ - Tiempo de subida, typ: 50 nS

Encapsulados: TO247

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MM20G3R135B datasheet

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 mm20g3r135b.pdf pdf_icon

MM20G3R135B

MM20G3R135B 1350V 20A RC- IGBT March 2018 Preliminary RoHS Compliant PRODUCT FEATURES 1350V Reverse conducting IGBT with monolithic body diode VCE(sat) with positive temperature coefficient Low switching losses Low EMI 1 2 3 APPLICATIONS HInductive cooking 1.Gate Inverterized microwave ovens 2.Collector 3.Emitter Resonant converters Soft switchi

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 mm20g3t135b.pdf pdf_icon

MM20G3R135B

MM20G3T135B 1350V 20A IGBT April 2020 Version 02 RoHS Compliant PRODUCT FEATURES 1350V IGBT chip in trench FS-technology Low switching losses VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery 1 2 3 APPLICATIONS Induction Heating 1.Gate Soft Switching Application

Otros transistores... BT60N60ANF, GT50N324, MGD622, FGA40N65SMD, FGL40N120AND, MM10G3T120B, MM120G3T65BM, MM15G3T120B, FGH30S130P, MM20G3T135B, MM25G3T120B, MM25G3U120BX, MM40G3T120B, MM40G3U120B, MM40G3U120BX, MM40G3U65B, MM40G3U65BN