MM50G3U120BMX IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MM50G3U120BMX

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 535 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 83 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.95 V @25℃

trⓘ - Tiempo de subida, typ: 25 nS

Encapsulados: TO247PLUS

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MM50G3U120BMX datasheet

 ..1. Size:337K  macmic
 mm50g3u120bmx.pdf pdf_icon

MM50G3U120BMX

MM50G3U120BMX 1200V 50A IGBT June 2020 Version 01 RoHS Compliant PRODUCT FEATURES IGBT chip in trench FS-technology Low switching losses VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery 1 2 3 APPLICATIONS High frequency switching application 1.Gate Medical appl

 8.1. Size:337K  macmic
 mm50g3t120bm.pdf pdf_icon

MM50G3U120BMX

MM50G3T120BM 1200V 50A IGBT June 2020 Version 01 RoHS Compliant PRODUCT FEATURES IGBT chip in trench FS-technology Low switching losses VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery 1 2 3 APPLICATIONS High frequency switching application 1.Gate Medical appli

 9.1. Size:252K  macmic
 mm50g120l.pdf pdf_icon

MM50G3U120BMX

MM50G120L 1200V 50A IGBT February 2013 PRELIMINARY RoHS Compliant FEATURES Low switching losses Low EMI Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery V with positive temperature coefficient CE(sat) 1 2 To-264 3 APPLICATIONS High frequency switching application Medical applications 1.Gate

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