MM50G3U120BMX Datasheet and Replacement
Type Designator: MM50G3U120BMX
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 535 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 83 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.95 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
Tj ⓘ - Maximum Junction Temperature: 175 ℃
tr ⓘ - Rise Time, typ: 25 nS
Qg ⓘ - Total Gate Charge, typ: 280 nC
Package: TO247PLUS
MM50G3U120BMX substitution
MM50G3U120BMX Datasheet (PDF)
mm50g3u120bmx.pdf

MM50G3U120BMX1200V 50A IGBTJune 2020 Version 01 RoHS CompliantPRODUCT FEATURES IGBT chip in trench FS-technology Low switching losses VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery123APPLICATIONS High frequency switching application1.Gate Medical appl
mm50g3t120bm.pdf

MM50G3T120BM1200V 50A IGBTJune 2020 Version 01 RoHS CompliantPRODUCT FEATURES IGBT chip in trench FS-technology Low switching losses VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery123APPLICATIONS High frequency switching application1.Gate Medical appli
mm50g120l.pdf

MM50G120L 1200V 50A IGBT February 2013 PRELIMINARY RoHS Compliant FEATURES Low switching losses Low EMI Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery V with positive temperature coefficient CE(sat)1 2 To-264 3 APPLICATIONS High frequency switching application Medical applications 1.Gate
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
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