MMG100W120XB6T4N - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MMG100W120XB6T4N
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Máxima potencia disipada (Pc), W: 515
Tensión máxima colector-emisor |Vce|, V: 1200
Tensión máxima puerta-emisor |Vge|, V: 20
Colector de Corriente Continua a 25℃ |Ic|, A: 150
Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 1.75
Tensión máxima de puerta-umbral |VGE(th)|, V: 6.4
Temperatura máxima de unión (Tj), ℃: 175
Tiempo de subida (tr), typ, nS: 30
Carga total de la puerta (Qg), typ, nC: 800
Paquete / Cubierta: MODULE
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MMG100W120XB6T4N Datasheet (PDF)
mmg100w120xb6t4n.pdf
MMG100W120XB6T4N1200V 100A PIM ModuleFebruary 2015 Version 0 RoHS CompliantPRODUCT FEATURES IGBT Chip(IGBT4 Trench+Field Stop technology)Diode Chip(Emcon4 wheeling diode) High level of integrationonly one power semiconductor module required for the whole drive Low saturation voltage and positive temperature coefficient Fast switching and short tail current F
mmg100w120x6tn.pdf
MMG100W120X6TN1200V 100A Six-Pack ModuleMay 2015 Version 01 RoHS CompliantPRODUCT FEATURES IGBT Chip(IGBT3 Trench+Field Stop technology)Diode Chip(Emcon3 wheeling diode) High level of integrationonly one power semiconductor module required for the whole drive Low saturation voltage and positive temperature coefficient Fast switching and short tail current Fr
mmg100w120x6tc.pdf
MMG100W120X6TC1200V 100A Six-Pack ModuleJune 2020 Preliminary RoHS CompliantPRODUCT FEATURES High level of integration IGBT CHIP(Trench+Field Stop technology) Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Industry standard package with insulated copper
Otros transistores... AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , SGT40N60FD2PN , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: BRGH25N120D | BRGH15N120D | BRGB6N65DP | BRG60N60D | BRG10N120D | TT100N120PF1E | TT075U065FQB | TT075U065FBC | TT075N120EBC | TT075N065EQ | TT060U065FQ