MMG100W120XB6T4N IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MMG100W120XB6T4N

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 515 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 150 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.75 V @25℃

trⓘ - Tiempo de subida, typ: 30 nS

Encapsulados: MODULE

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MMG100W120XB6T4N datasheet

 0.1. Size:271K  macmic
 mmg100w120xb6t4n.pdf pdf_icon

MMG100W120XB6T4N

MMG100W120XB6T4N 1200V 100A PIM Module February 2015 Version 0 RoHS Compliant PRODUCT FEATURES IGBT Chip(IGBT4 Trench+Field Stop technology) Diode Chip(Emcon4 wheeling diode) High level of integration only one power semiconductor module required for the whole drive Low saturation voltage and positive temperature coefficient Fast switching and short tail current F

 3.1. Size:372K  macmic
 mmg100w120x6tn.pdf pdf_icon

MMG100W120XB6T4N

MMG100W120X6TN 1200V 100A Six-Pack Module May 2015 Version 01 RoHS Compliant PRODUCT FEATURES IGBT Chip(IGBT3 Trench+Field Stop technology) Diode Chip(Emcon3 wheeling diode) High level of integration only one power semiconductor module required for the whole drive Low saturation voltage and positive temperature coefficient Fast switching and short tail current Fr

 3.2. Size:1596K  macmic
 mmg100w120x6tc.pdf pdf_icon

MMG100W120XB6T4N

MMG100W120X6TC 1200V 100A Six-Pack Module June 2020 Preliminary RoHS Compliant PRODUCT FEATURES High level of integration IGBT CHIP(Trench+Field Stop technology) Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Industry standard package with insulated copper

MOSTRAR MÁS

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