MMG100W120XB6T4N IGBT. Datasheet pdf. Equivalent
Type Designator: MMG100W120XB6T4N
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 515 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 150 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.75 V @25℃
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 30 nS
Package: MODULE
MMG100W120XB6T4N Transistor Equivalent Substitute - IGBT Cross-Reference Search
MMG100W120XB6T4N Datasheet (PDF)
mmg100w120xb6t4n.pdf
MMG100W120XB6T4N1200V 100A PIM ModuleFebruary 2015 Version 0 RoHS CompliantPRODUCT FEATURES IGBT Chip(IGBT4 Trench+Field Stop technology)Diode Chip(Emcon4 wheeling diode) High level of integrationonly one power semiconductor module required for the whole drive Low saturation voltage and positive temperature coefficient Fast switching and short tail current F
mmg100w120x6tn.pdf
MMG100W120X6TN1200V 100A Six-Pack ModuleMay 2015 Version 01 RoHS CompliantPRODUCT FEATURES IGBT Chip(IGBT3 Trench+Field Stop technology)Diode Chip(Emcon3 wheeling diode) High level of integrationonly one power semiconductor module required for the whole drive Low saturation voltage and positive temperature coefficient Fast switching and short tail current Fr
mmg100w120x6tc.pdf
MMG100W120X6TC1200V 100A Six-Pack ModuleJune 2020 Preliminary RoHS CompliantPRODUCT FEATURES High level of integration IGBT CHIP(Trench+Field Stop technology) Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Industry standard package with insulated copper
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
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