MMG15CB120XB6TC - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MMG15CB120XB6TC
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 130 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 27 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.85 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.5 V
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 22 nS
Qgⓘ - Carga total de la puerta, typ: 105 nC
Paquete / Cubierta: MODULE
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MMG15CB120XB6TC Datasheet (PDF)
mmg15cb120xb6tn.pdf
MMG15CB120XB6TN1200V 15A PIM ModuleFebruary 2017 Version 2 RoHS CompliantPRODUCT FEATURES Low saturation voltage and positive temperature coefficient Substrate for Low Thermal Resistance Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Solder Contact Technology, Rugged mounting due to integrated Mounting clamps
mmg15cb120xb6tc.pdf
MMG15CB120XB6TC1200V 15A PIM ModuleNovember 2019 Version 01 RoHS CompliantPRODUCT FEATURES IGBT CHIP(Trench+Field Stop technology) Substrate for Low Thermal Resistance Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Solder Contact Technology, Rugged moun
mmg15cb120x6tc.pdf
MMG15CB120X6TC1200V 15A Six-Pack ModuleNovember 2019 Version 01 RoHS CompliantPRODUCT FEATURES IGBT CHIP(Trench+Field Stop technology) Substrate for Low Thermal Resistance Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Solder Contact Technology, Rugged
Otros transistores... MMG150S120B6UC , MMG150S120UA6TC , MMG150W060X6EN , MMG150W060XB6EN , MMG150W120X6TC , MMG150WB170H6EN , MMG150WJ120XB6TC , MMG15CB120X6TC , IRG7R313U , MMG15CB120XB6TN , MMG200B065PD6EN , MMG200D120B6TC , MMG200D120B6UC , MMG200D120UA6TC , MMG200D120UA6TN , MMG200D120UK6TN , MMG200D170B .
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Recientemente añadidas las descripciónes de los transistores
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2